Nexperia

BAS40LS

General-purpose Schottky diode

8. Limiting values

Table 5. Limiting values

In accordance with the Absolute Maximum Rating System (IEC 60134).

Symbol

Parameter

Conditions

Min

Max

Unit

VR

reverse voltage

-

40

V

IF

forward current

-

120

mA

IFRM

repetitive peak forward

current

tp ≤ 1 s; δ ≤ 0.5

-

120

mA

IFSM

non-repetitive peak

forward current

tp ≤ 10 ms; Tj(init) = 25 °C

[1]

-

200

mA

Tj

junction temperature

-

150

°C

Tamb

ambient temperature

-55

150

°C

Tstg

storage temperature

-65

150

°C

[1] Tj = 25 °C prior to surge

9. Thermal characteristics

Table 6. Thermal characteristics

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

Rth(j-a)

thermal resistance from

junction to ambient

in free air

[1]

-

-

360

K/W

[1] Device mounted on an FR4 Printed-Circuit Board (PCB), 70 µm single-sided copper, tin-plated and standard footprint.

aaa-031867

10

1

102

103

Zth(j-a)

(K/W)

10-1

10-5

10

10-2

10-4

102

10-1

tp (s)

10-3

103

1

duty cycle = 1

0.01

0.02

0.05

0.10

0.20

0.33

0.50

0.75

0

0.25

FR4 PCB, 70 μm single sided copper standard footprint

Fig. 1. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values

BAS40LS

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© Nexperia B.V. 2021. All rights reserved

Product data sheet

12 February 2021

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