DMTH45M5LFVWQ

Document number: DS44459 Rev. 3 - 2

2 of 8

www.diodes.com

March 2023

© 2023 Copyright Diodes Incorporated. All Rights Reserved.

DMTH45M5LFVWQ

Marking Information

Maximum Ratings (@TA = +25°C, unless otherwise specified.)

Characteristic

Symbol

Value

Unit

Drain-Source Voltage

VDSS

40

V

Gate-Source Voltage

VGSS

±20

V

Continuous Drain Current (Note 5), VGS = 10V

TC = +25°C

TC = +100°C

ID

71

50

A

Continuous Drain Current (Note 6), VGS = 10V

TA = +25°C

TA = +100°C

ID

18

13

A

Pulsed Drain Current (10

μs Pulse, Duty Cycle = 1%)

IDM

284

A

Maximum Continuous Body Diode Forward Current (Note 5)

IS

71

A

Pulsed Body Diode Forward Current (10

μs Pulse, Duty Cycle = 1%)

ISM

284

A

Avalanche Current, L = 0.1mH

IAS

19.6

A

Avalanche Energy, L = 0.1mH

EAS

19.2

mJ

Thermal Characteristics

Characteristic

Symbol

Value

Unit

Total Power Dissipation (Note 6)

TA = +25°C

PD

3.5

W

Thermal Resistance, Junction to Ambient (Note 6)

RθJA

42

°C/W

Total Power Dissipation (Note 5)

TC = +25°C

PD

51

W

Thermal Resistance, Junction to Case (Note 5)

RθJC

2.9

°C/W

Operating and Storage Temperature Range

TJ, TSTG

-55 to +175

°C

Notes:

5. Thermal resistance from junction to soldering point (on the exposed drain pad).

6. Device mounted on FR-4 substrate PC board, 2oz copper, with thermal bias to bottom layer 1inch square copper plate.

T4L = Product Type Marking Code

YYWW = Date Code Marking

YY = Last Two Digits of Year (ex: 23 = 2023)

WW = Week Code (01 to 53)

T4L

PowerDI3333-8 (SWP) (Type UX)