ART150PE_ART150PEG

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Product data sheet

Rev. 1 — 13 January 2023

3 of 19

ART150PE; ART150PEG

Power LDMOS transistor

5.

Thermal characteristics

[1]

Refer to application note AN221014 on the Ampleon website.

[2]

See Figure 1.

Table 5.

Thermal characteristics

According to standard MIL-STD-883E.

Symbol Parameter

Conditions

Typ

Unit

Rth(j-c)

thermal resistance from junction to case Tj =57 C, measured

under RF condition

[1][2] 0.50

K/W

(1)

 = 0.1 % (single pulse)

(2)

 = 1 %

(3)

 = 5 %

(4)

 = 10 %

(5)

 = 20 %

(6)

 = 50 %

(7)

 = 100 % (steady state)

Fig 1.

Transient thermal impedance from junction to case as a function of pulse

duration

amp01814

10-6

10-5

10-4

10-3

10-2

10-1

1

10

0

0.1

0.2

0.3

0.4

0.5

0.6

tp (s)

Zth(j-c)

th(j-c)

Zth(j-c)

(K/W)

(K/W)

(K/W)

(7)

(7)

(7)

(6)

(6)

(6)

(5)

(5)

(5)

(4)

(4)

(4)

(3)

(3)

(3)

(2)

(2)

(2)

(1)

(1)

(1)