STT5NF30L datasheet(2/8 Pages) STMICROELECTRONICS

2 / 8 page

STT5NF30L

2/8

ABSOLUTE MAXIMUM RATINGS

(•)Pulse width limited by safe operating area

(1) Starting Tj =25°C, Id =2A, VDD =15V.

THERMAL DATA

ON/OFF

Symbol

Parameter

Value

Unit

VDS

Drain-source Voltage (VGS =0)

VDGR

Drain-gate Voltage (RGS =20kΩ)

VGS

Gate- source Voltage

± 16

Drain Current (continuous) at TC = 25°C

Drain Current (continuous) at TC = 100°C

2.5

IDM ( )

Drain Current (pulsed)

PTOT

Total Dissipation at TC = 25°C

1.6

EAS (1)

Single Pulse Avalanche Energy

Rthj-amb

Thermal Resistance Junction-ambient

Max

°C/W

Max. Operating Junction Temperature

- 55 to 150

°C

Tstg

Storage Temperature

- 55 to 150

°C

Symbol

Parameter

Test Conditions

Min.

Typ.

Max.

Unit

V(BR)DSS

Drain-source

Breakdown Voltage

ID = 250 µA, VGS = 0

IDSS

Zero Gate Voltage

Drain Current (VGS =0)

VDS = Max Rating

1µA

VDS = Max Rating, TC = 125°C

µA

IGSS

Gate-body Leakage

Current (VDS =0)

VGS = ± 16V

±100

µA

VGS(th)

Gate Threshold Voltage

VDS =VGS,ID = 250 µA

RDS(on)

Static Drain-source On

Resistance

VGS =10 V,ID =2 A

VGS =5V, ID =2 A

0.039

0.046

0.050

0.060

Ω

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