DXTP58100CFDB

Document number: DS42254 Rev. 2 - 2

2 of 7

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November 2019

© Diodes Incorporated

DXTP58100CFDB

Absolute Maximum Ratings (@TA = +25°C, unless otherwise specified.)

Parameter

Symbol

Limit

Unit

Collector-Base Voltage

VCBO

-100

V

Collector-Emitter Voltage

VCEO

-100

Emitter-Base Voltage

VEBO

-7

Peak Pulse Current

ICM

-4

A

Continuous Collector Current

IC

-2

Thermal Characteristics (@TA = +25°C, unless otherwise specified.)

Characteristic

Symbol

Value

Unit

Power Dissipation

(Note 5)

PD

0.69

W

(Note 6)

1.25

Thermal Resistance, Junction to Ambient

(Note 5)

RJA

180

°C/W



(Note 6)

100

Operating and Storage Temperature Range

TJ, TSTG

-55 to +150

°C

ESD Ratings (Note 7)

Characteristic

Symbol

Value

Unit

JEDEC Class

Electrostatic Discharge - Human Body Model

ESD HBM

4,000

V

3A

Electrostatic Discharge - Machine Model

ESD MM

400

V

C

Notes:

5. For a device mounted with the exposed collector on 5mm x 5mm 2oz copper on single sided FR4 PCB; device is measured under still air conditions

whilst operating in the steady state.

6. Same as Note (5) except the exposed collector pad is mounted on 25mm x 25mm 1oz copper.

7. Refer to JEDEC specification JESD22-A114 and JESD22-A115.