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DP83231 数据表(PDF) 8 Page - National Semiconductor (TI)

[Old version datasheet] Texas Instruments acquired National semiconductor.
部件名 DP83231
功能描述  CRD Device (FDDI Clock Recovery Device)
PDF  16 Pages
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制造商  NSC [National Semiconductor (TI)]
网页  http://www.national.com
标志 NSC - National Semiconductor (TI)

DP83231 数据表(HTML) 8 Page - National Semiconductor (TI)

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40 Electrical Characteristics (Continued)
43 DC ELECTRICAL CHARACTERISTICS
Symbol
Parameter
Conditions
Min
Max
Units
VIC
Input Clamp Voltage
IIN e 18 mA
b
15
V
VOH
High Level
TTL Outputs IOH eb400 mAVCC b 2V
Output Voltage
ECL Outputs
VCC b 1025
VCC b 880
mV
50X Load to VCC b 2V
VOL
Low Level
TTL Outputs IOL e 4 mA
05
V
Output Voltage
ECL Outputs
VCC b 1810
VCC b 1620
mV
50X Load to VCC b 2V
II
Max High Level
TTL Inputs VIN e 7V
100
m
A
Input Current
IIH
High Level
TTL Inputs VIN e 27V
b
20
20
m
A
Input Current
IIL
Low Level
TTL Inputs VIN e 04V
b
20
20
m
A
Input Current
Ifilter
Charge Pump Current
Source
b
03
b
07
mA
Sink
03
07
mA
TRI-STATE
b
500
500
nA
ICC
Supply Current
180
mA
Includes 60 mA due to external ECL termination of two differential signals
For 100k ECL output buffers output levels are specified as
VOH max e VCC b 088V
VOL max e VCC b 162V
Since the outputs are differential the average output level is VCC b 125V The test load per output is 50X at VCC b 2V The external load current through this
50X resistor is thus
I
load e (VCC b 125) b (VCC b 2) 50A
e
0015A
e
15 mA
There are 2 pairs of differential ECL signals so the total ECL current is 60 mA
44 AC ELECTRICAL CHARACTERISTICS
Symbol
Parameter
Conditions
Min
Max
Units
T1
Phase Difference
b
22
ns
T2
RXC Pos Pulse Width
(Note 1)
3
5
ns
T3
CLK DET Time
CRD EN Neg Pulse Width e 1 ms
100
m
s
(Valid DATA g Present)
T4
Valid Data Time
CRD EN e High
100
m
s
Note 1
These parameters are not tested but are assured by correlation with characterization data
8



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