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2N7002L-AE3-R 数据表(PDF) 2 Page - Unisonic Technologies

部件名 2N7002L-AE3-R
功能描述  N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR
PDF  6 Pages
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制造商  UTC [Unisonic Technologies]
网页  http://www.utc-ic.com
标志 UTC - Unisonic Technologies

2N7002L-AE3-R 数据表(HTML) 2 Page - Unisonic Technologies

  2N7002L-AE3-R Datasheet HTML 1Page - Unisonic Technologies 2N7002L-AE3-R Datasheet HTML 2Page - Unisonic Technologies 2N7002L-AE3-R Datasheet HTML 3Page - Unisonic Technologies 2N7002L-AE3-R Datasheet HTML 4Page - Unisonic Technologies 2N7002L-AE3-R Datasheet HTML 5Page - Unisonic Technologies 2N7002L-AE3-R Datasheet HTML 6Page - Unisonic Technologies  
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2N7002
MOSFET
UNISONICTECHNOLOGIESCO.,LTD
2
www.unisonic.com.tw
QW-R206-037,B
ABSOLUTE MAXIMUM RATINGS (Ta=25°C unless otherwise noted.)
PARAMETER
SYMBOL
RATINGS
UNIT
Drain-Source Voltage
VDSS
60
V
Drain-Gate Voltage (RGS ≤1MΩ)
VDGR
60
V
Continuous
±20
Gate Source Voltage
Non Repetitive(tp<50
µs)
VGSS
±40
V
Continuous
115
Maximum Drain
Current
Pulsed
ID
800
mA
Maximum Power Dissipation
Derated above 25
°C
PD
200
1.6
mW
mW/
°C
Operating Temperature
TOPR
0 ~ +70
°C
Storage Temperature
TSTG
-40 ~ +150
THERMAL CHARACTERISTICS
PARAMETER
SYMBOL
RATINGS
UNIT
Thermal Resistance, Junction to Ambient
θJA
625
°C/W
ELECTRICAL CHARACTERISTICS (TA=25°C, unless otherwise specified.)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNIT
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
BVDSS
VGS=0V, ID=10µA
60
V
0.5
mA
Zero Gate Voltage Drain Current
IDSS
VDS=60V, VGS =0V
TJ=125°C
1
µA
Gate-Body leakage, Forward
IGSSF
VGS =20V, VDS=0V
100
nA
Gate-Body leakage Reverse
IGSSR
VGS =-20V, VDS=0V
-100
nA
ON CHARACTERISTICS
(Note)
Gate Threshold Voltage
VGS (th)
VGS = VDS, ID=250µA
1
2.1
2.5
V
VGS = 10V, ID=500mA
0.6
3.75
Drain-Source On-Voltage
VDS (ON)
VGS = 5.0V, ID=50mA
0.09
1.5
V
On-State Drain Current
ID(ON)
VGS=10V,VDS≥2VDS(ON)
500
2700
mA
VGS =10V, ID=500mA
TJ=100°C
1.2
1.7
7.5
13.5
Ω
Static Drain-Source On-Resistance
RDS (ON)
VGS =5.0V, ID=50mA
TJ=100°C
1.7
2.4
7.5
13.5
Forward Transconductance
gFS
VDS≥2VDS(ON), ID=200mA
80
320
mS
DYNAMIC CHARACTERISTICS
Input Capacitance
Ciss
VDS=25V,VGS=0V,f=1.0MHz
20
50
pF
Output Capacitance
Coss
11
25
pF
Reverse Transfer Capacitance
Crss
4
5
pF
Turn-On Time
tON
VDD=30V, RL=150Ω
ID=200mA, VGS =10V
RGEN =25Ω
20
nS
Turn-Off Time
tOFF
VDD=30V, RL=25Ω
ID=200mA, VGS=10V
RGEN =25Ω
20
nS
DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS
Drain-Source Diode Forward Voltage
VSD
VGS=0V, Is=115mA (Note )
0.88
1.5
V
Maximum Pulsed Drain-Source Diode
Forward Current
ISM
0.8
A
Maximum Continuous Drain-Source
Diode Forward Current
Is
115
mA
Note: Pulse Test: Pulse Width≤300µs, Duty Cycle≤2.0%



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