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BFR93. 数据表(PDF) 4 Page - NXP Semiconductors |
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BFR93. 数据表(HTML) 4 Page - NXP Semiconductors |
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4 / 12 page ![]() 1997 Oct 29 4 Philips Semiconductors Product specification NPN 5 GHz wideband transistor BFR93 Fig.2 Intermodulation distortion test circuit. L2=L3=5 µH Ferroxcube choke, catalogue number 3122 108 20150. L1 = 4 turns 0.35 mm copper wire; winding pitch 1 mm; internal diameter 4 mm. handbook, halfpage MEA454 680 pF 240 L1 L2 680 pF 75 Ω input 75 Ω output 16 Ω 1.2 k L3 390 560 680 pF DUT +24 V Ω Ω Ω Ω Ω Fig.3 Power derating curve. handbook, halfpage 0 50 100 200 400 300 100 0 200 MBG246 150 P tot (mW) T s (o C) Fig.4 DC current gain as a function of collector current; typical values. VCE = 5 V; Tj =25 °C. handbook, halfpage 010 20 30 120 0 40 80 MCD087 h FE I (mA) C Fig.5 Collector capacitance as a function of collector-base voltage; typical values. IE =ie = 0; f = 1 MHz; Tj =25 °C. handbook, halfpage 04 8 16 1 0 0.8 MEA450 12 0.6 0.4 0.2 20 VCB (V) Cc (pF) |
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