BFS17 datasheet(3/6 Pages) PHILIPS

3 / 6 page

September 1995

Philips Semiconductors

Product speciﬁcation

NPN 1 GHz wideband transistor

BFS17

THERMAL CHARACTERISTICS

Note

1. Ts is the temperature at the soldering point of the collector pin.

CHARACTERISTICS

Tj =25 °C unless otherwise speciﬁed.

SYMBOL

PARAMETER

CONDITIONS

VALUE

UNIT

Rth j-s

thermal resistance from junction to soldering point

up to Ts =70 °C; note 1

260

K/W

SYMBOL

PARAMETER

CONDITIONS

MIN.

TYP.

MAX.

UNIT

ICBO

collector cut-off current

IE = 0; VCB =10V

−−

hFE

DC current gain

IC = 2 mA; VCE =1V

−

IC = 25 mA; VCE =1V

−

transition frequency

IC = 2 mA; VCE = 5 V; f = 500 MHz

−

GHz

IC = 25 mA; VCE = 5 V; f = 500 MHz

−

1.6

−

GHz

collector capacitance

IE =ie = 0; VCB = 10 V; f = 1 MHz

−

0.8

1.5

emitter capacitance

IC =ic = 0; VEB = 0.5 V; f = 1 MHz

−−

2pF

Cre

feedback capacitance

IC = 1 mA; VCE = 5 V; f = 1 MHz

−

0.65

−

noise ﬁgure

IC = 2 mA; VCE =5V; RS =50 Ω;

f = 500 MHz

−

4.5

−

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