BFS25 datasheet(5/11 Pages) PHILIPS

5 / 11 page

December 1997

Philips Semiconductors

Product speciﬁcation

NPN 5 GHz wideband transistor

BFS25A

In Figs 6 to 9, GUM = maximum unilateral power gain;

MSG = maximum stable gain; Gmax = maximum available

gain.

Fig.6 Gain as a function of collector current.

VCE = 1 V; f = 500 MHz; Tamb =25 °C.

handbook, halfpage

MRC035

0.5

1.5

2.5

MSG

GUM

gain

(dB)

IC (mA)

Fig.7

Maximum unilateral power gain as a

function of collector current.

f = 1 GHz; Tamb =25 °C.

handbook, halfpage

0.5

1.5

2.5

IC (mA)

GUM

(dB)

MRC036

1 V

= 3 V

Fig.8 Gain as a function of frequency.

IC = 0.5 mA; VCE = 1 V; Tamb =25 °C.

handbook, halfpage

MRC034

0.01

0.1

f (GHz)

MSG

GUM

Gmax

gain

(dB)

Fig.9 Gain as a function of frequency.

IC = 1 mA; VCE = 1 V; Tamb =25 °C.

handbook, halfpage

MRC033

10−1

10−2

110

MSG

GUM

Gmax

gain

(dB)

f (GHz)

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