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BFS505 数据表(PDF) 3 Page - NXP Semiconductors |
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BFS505 数据表(HTML) 3 Page - NXP Semiconductors |
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3 / 12 page ![]() September 1995 3 Philips Semiconductors Product specification NPN 9 GHz wideband transistor BFS505 LIMITING VALUES In accordance with the Absolute Maximum System (IEC 134). THERMAL RESISTANCE Note 1. Ts is the temperature at the soldering point of the collector tab. SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VCBO collector-base voltage open emitter − 20 V VCES collector-emitter voltage RBE =0 − 15 V VEBO emitter-base voltage open collector − 2.5 V IC DC collector current − 18 mA Ptot total power dissipation up to Ts = 147 °C; note 1 − 150 mW Tstg storage temperature −65 150 °C Tj junction temperature − 175 °C SYMBOL PARAMETER CONDITIONS THERMAL RESISTANCE Rth j-s thermal resistance from junction to soldering point up to Ts = 147 °C; note 1 190 K/W |
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