BFS540 datasheet(4/11 Pages) PHILIPS

部件名	BFS540

功能描述	NPN 9 GHz wideband transistor

PDF	11 Pages

Scroll/Zoom	100%

制造商	PHILIPS [NXP Semiconductors]

网页	http://www.nxp.com

标志

4 / 11 page

November 1992

Philips Semiconductors

Product speciﬁcation

NPN 9 GHz wideband transistor

BFS540

Fig.2 Power derating curve.

VCE ≤ 10 V.

handbook, halfpage

100

200

400

300

100

200

MRC008 - 1

150

tot

(mW)

(o C)

Fig.3

DC current gain as a function of collector

current.

VCE = 8 V; Tj =25 °C.

handbook, halfpage

100

150

200

10−1

10−2

110

102

IC (mA)

h FE

MRC010

Fig.4

Feedback capacitance as a function of

collector-base voltage.

IC = 0; f = 1 MHz.

handbook, halfpage

MRC001

0.2

0.4

0.6

0.8

0246

(pF)

(V)

Cre

Fig.5

Transition frequency as a function of

collector current.

f = 1 GHz; Tamb =25 °C.

handbook, halfpage

MRC002

110

102

= 8 V

4 V

f T

(GHz)

IC (mA)

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