PZUXDB2_SER_1

© NXP B.V. 2008. All rights reserved.

Product data sheet

Rev. 01 — 31 March 2008

5 of 12

NXP Semiconductors

PZUxDB2 series

Dual Zener diodes

[1]

f = 1 MHz; VR =0V

[2]

tp = 100 µs; square wave; Tj =25 °C prior to surge

8.2

8.02

8.36

60

10

0.5

5

4.6

150

3.5

9.1

8.85

9.23

60

10

0.5

6

5.5

120

3.5

10

9.77

10.21

60

10

0.1

7

6.4

110

3.5

11

10.76

11.22

60

10

0.1

8

7.4

108

3

12

11.74

12.24

80

10

0.1

9

8.4

105

3

13

12.91

13.49

80

10

0.1

10

9.4

103

2.5

14

13.7

14.3

80

10

0.1

11

10.4

101

2

15

14.34

14.98

80

15

0.05

11

11.4

99

2

16

15.85

16.51

80

20

0.05

12

12.4

97

1.5

18

17.56

18.35

80

20

0.05

13

14.4

93

1.5

20

19.52

20.39

100

20

0.05

15

16.4

88

1.5

22

21.54

22.47

100

25

0.05

17

18.4

84

1.3

24

23.72

24.78

120

30

0.05

19

20.4

80

1.3

Table 8.

Characteristics per type; PZU2.7DB2 to PZU24DB2 and PZU2.7DB2/DG to PZU24DB2/DG …continued

Tj =25 °C unless otherwise specified.

PZUxDB2

PZUxDB2/DG

Working

voltage

VZ (V)

Differential resistance

rdif (Ω)

Reverse

current

IR (µA)

Temperature

coefficient

SZ (mV/K)

Diode

capacitance

Cd (pF)[1]

Non-repetitive

peak reverse

current

IZSM (A)[2]

IZ =5mA

IZ = 0.5 mA IZ =5mA

IZ =5mA

Min

Max

Max

Max

Max

VR (V) Typ

Max

Max