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STTH810D 数据表(PDF) 2 Page - STMicroelectronics |
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STTH810D 数据表(HTML) 2 Page - STMicroelectronics |
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2 / 11 page ![]() Characteristics STTH810 2/11 1 Characteristics To evaluate the conduction losses use the following equation: P = 1.3 x IF(AV) + 0.05 IF 2 (RMS) Table 1. Absolute ratings (limiting values at 25° C, unless otherwise specified) Symbol Parameter Value Unit VRRM Repetitive peak reverse voltage 1000 V IF(RMS) RMS forward current TO-220AC / D2PAK / TO-220FPAC 30 A TO-220AC Ins 20 IF(AV) Average forward current, δ = 0.5 TO-220AC / D2PAK Tc = 130° C 8A TO-220FPAC Tc = 75° C TO-220AC Ins Tc = 105° C IFRM Repetitive peak forward current tp = 5 µs, F = 5 kHz square 100 A IFSM Surge non repetitive forward current tp = 10 ms Sinusoidal 60 A Tstg Storage temperature range -65 to + 175 °C Tj Maximum operating junction temperature 175 °C Table 2. Thermal parameters Symbol Parameter Value Unit Rth(j-c) Junction to case TO-220AC / D2PAK 2.5 °C/W TO-220FPAC 5.8 TO-220AC Ins 4.1 Table 3. Static electrical characteristics Symbol Parameter Test conditions Min. Typ Max. Unit IR (1) Reverse leakage current Tj = 25° C VR = VRRM 5 µA Tj = 125° C 2 20 VF (2) Forward voltage drop Tj = 25° C IF = 8 A 2 V Tj = 100° C 1.4 1.8 Tj = 150° C 1.3 1.7 1. Pulse test: tp = 5 ms, δ < 2 % 2. Pulse test: tp = 380 µs, δ < 2 % |
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