UPC1676B

UPC1676G

UPC1676P

PART NUMBER

UPC1676G

UPC1676P

PACKAGE OUTLINE

B08

39

CHIP

SYMBOLS

PARAMETERS AND CONDITIONS

UNITS

MIN

TYP

MAX

MIN

TYP

MAX

MIN

TYP

MAX

Supply Current

mA

14

19

24

14

19

24

14

19

24

Small Signal Gain

dB

18

20

22

19

22

24

19

22

24

Saturated Output Power

dBm

3.5

5.5

3

5

3

5

BW

Bandwidth 3 dB down from gain at 100 MHz

MHz

1000 1300

1000 1200

1000 1300

NF

Noise Figure

dB

4.5

6

4.5

6

4.5

6

Input Return Loss

dB

18

21

9

12

21

Output Return Loss

dB

10

13

6

9

13

ISOL

Isolation

dB

24

28

24

28

24

28

Thermal Resistance (Junction to Case)

°C/W

50

DESCRIPTION

The UPC1676 is a silicon monolithic integrated circuit de-

signed for wide-band amplifiers covering the VHF to UHF

bands. The series is available in two package styles: a surface

mount package (UPC1676G), and an 8 lead ceramic flat

package (UPC1676B). Also available in chip form (UPC1676P).

NEC's stringent quality assurance and test procedures en-

sure the highest reliability and performance.

1.2 GHz BANDWIDTH LOW

NOISE SILICON MMIC AMPLIFIER

• WIDE BANDWIDTH:

1200 MHz at 3 dB Point for UPC1676G

1300 MHz at 3 dB Point for UPC1676B, UPC1676P

• HIGH POWER GAIN: 22 dB TYP AT f = 500 MHz

• HIGH ISOLATION

• INPUT/OUTPUT MATCHED TO 50

Ω

• AVAILABLE IN TAPE AND REEL (UPC1676G)

FEATURES

UPC1676G

NOISE FIGURE AND GAIN

vs. FREQUENCY AND VOLTAGE

Note:

1. Case must be connected to GND for stable RF operation and optimum thermal dissipation.

Frequency, f (MHz)

60

100

200

500

1000

2000

30

20

10

0

10

5

0

NF

4.5 V

5.0 V

5.0 V

4.5 V

California Eastern Laboratories