PNP Silicon Epitaxial Planar Transistor

KTA1663

ELECTRICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified

Parameter

Symbol

Test conditions

MIN

TYP

MAX

UNIT

Collector-base breakdown voltage

V(BR)CBO

IC=-1mA,IE=0

-30

V

Collector-emitter breakdown voltage V(BR)CEO

IC=-10mA,IB=0

-30

V

Emitter-base breakdown voltage

V(BR)EBO

IE=-1mA,IC=0

-5

V

Collector cut-off current

ICBO

VCB=-30V,IE=0

-0.1

μA

Emitter cut-off current

IEBO

VEB=-5V,IC=0

-0.1

μA

DC current gain

hFE

VCE=-2V,IC=-500mA

100

320

Collector-emitter saturation voltage

VCE(sat)

IC=-1.5A, IB= -0.03A

-2.0

V

Base-emitter voltage

VBE

VCE=-2V ,IC=-500mA

-1.0

V

Transition frequency

fT

VCE=-2V, IC= -500mA

120

MHz

Collector output capacitance

Cob

VCB=-10V,IE=0,f=1MHz

50

pF

CLASSIFICATION OF hFE(1)

Rank

O

Y

Range

100-200

160-320

MARKING

HO

HY

www.dgnjdz.com

www.dgnjdz.com