STTH3R02S datasheet(3/9 Pages) STMICROELECTRONICS

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STTH3R02

Characteristics

3/9

Table 4.

Dynamic characteristics

Symbol

Parameter

Test conditions

Min.

Typ

Max.

Unit

trr

Reverse recovery time

IF = 1 A, dIF/dt = -50 A/µs,

VR = 30 V, Tj = 25° C

IF = 1 A, dIF/dt = -100 A/µs,

VR = 30 V, Tj = 25° C

IRM

Reverse recovery current

IF = 3 A, dIF/dt = -200 A/µs,

VR = 160 V, Tj = 125° C

3.5

4.5

tfr

Forward recovery time

IF = 3 A, dIF/dt = 100 A/µs

VFR = 1.1 x VFmax, Tj = 25° C

VFP

Forward recovery voltage

IF = 3 A, dIF/dt = 100 A/µs,

Tj = 25° C

1.9

Figure 1.

peak current versus duty cycle

Figure 2.

Forward voltage drop versus

forward current (typical values)

100

0.0

0.1

0.2

0.3

0.4

0.5

0.6

0.7

0.8

0.9

1.0

M(A)

d=tp/T

δ=tp/T

P = 5 W

P = 3 W

P = 10 W

0.0

0.5

1.0

1.5

2.0

FM(A)

j=25°C

j=150°C

VFM(V)

Figure 3.

Forward voltage drop versus

forward current (maximum values)

Figure 4.

Relative variation of thermal

impedance junction to ambient

versus pulse duration - DO-201AD

(Epoxy printed circuit board FR4,

eCU =35µm)

0.0

0.5

1.0

1.5

2.0

FM(A)

j=25°C

j=150°C

VFM(V)

0.0

0.1

0.2

0.3

0.4

0.5

0.6

0.7

0.8

0.9

1.0

1.E-01

1.E+00

1.E+01

1.E+02

1.E+03

th(j-a)/Rth(j-a)

Single pulse

DO-201AD

Lleads=10mm

tP(s)

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