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CSB546 数据表(PDF) 2 Page - Continental Device India Limited |
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CSB546 数据表(HTML) 2 Page - Continental Device India Limited |
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2 / 3 page  Continental Device India Limited Data Sheet Page 2 of 3 Total power dissipation up to TC = 25°C Ptot max. 25 W Junction temperature Tj max. 150 ºC Storage temperature Tstg –65 to +150 ºC CHARACTERISTICS Tamb = 25°C unless otherwise specified Collector cutoff current IE = 0; VCB = 150 V ICBO max. 50 µA Breakdown voltages IC = 10 mA; IB = 0 VCEO min. 150 V IC = 500 µA; IE = 0 VCBO min. 200 V IE = 500 µA; IC = 0 VEBO min. 5.0 V Saturation voltages IC = 500 mA; IB = 50 mA VCEsat max. 1.0 V D.C. current gain IC = 0.4 A; VCE = 10 V** hFE min. 40 max. 240 Transition frequency IC = 0.4 A; VCE = 10 V fT typ. 5 MHz ** hFE classification: R: 40-80 O: 70-140 Y: 120-240 CSB546 |
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