41

5000

MSB

●IF(AV)

●

1000V

●High surge current capability

Applications

●

●

Marking

●

VRRM

Bridge Rectifier

Featur

es

Glass passivated chip

rpose 1 phase Bridge

rectifier applications

General pu

Item

Symbol Unit

Conditions

Repetitive Peak Reverse Voltage

VRRM

V

1000

Average Rectified Output Current

IO

A

60Hz sine wave,

R-load,Ta=100℃

On alumina substrate

Surge(Non-repetitive)Forward

Current

IFSM

A

sine wave, 1 cycle, Tj=25℃

Current Squared Time

I2t

A2S 1ms≤t<8.3ms Tj=25℃，Rating of per diode

Operation Junction and

Storage Temperature Range

TJ,Tstg

℃

-55 ~+150

V

700

VRMS

Maximum RMS Voltage

8.3ms

Item

Symbol Unit

Test Condition

Maximum Peak Forward Voltage

VFM

V

IFM= .0A, Pulse measurement, Rating of per diode

Maximum Peak Reverse Current

IRRM1

μ

A VRM=VRRM , Pulse measurement,

Rating of per diode

5.0

RθJ-A

Between junction and ambient, On alumina substrate

55

Thermal Resistance

RθJ-L

℃

/W

Between junction and lead

15

Electrical Characteristics (T=25℃ Unless otherwise specified）

RθJ-C

Between junction and case

10

Maximum DC Blocking Voltage

VDC

V

Max

500

Plastic-Encapsulate Bridge Rectifier

IRRM2

μ

A

TA=25℃

TA=125℃

1000

Measured with IF=0.5A,IR=1A,IRR=0.25A

TRR

ns

Maximum Reverse Recovery Time

(3)

(2)

(1)

(4)

(1)

(2)

(3)

(4)

MSB310

3A

MSB310

MSB

MSB310

3.0

0.98

90

DONGGUAN NANJING ELECTRONICS LTD.,

Dongguan Nanjing Electronics Ltd.

www.dgnjdz.com

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