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STP10P6F6 数据表(PDF) 1 Page - STMicroelectronics |
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STP10P6F6 数据表(HTML) 1 Page - STMicroelectronics |
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1 / 24 page ![]() This is information on a product in full production. July 2015 DocID022967 Rev 5 1/24 STD10P6F6, STF10P6F6, STP10P6F6, STU10P6F6 P-channel -60 V, 0.13 Ω typ., -10 A STripFET™ F6 Power MOSFETs in DPAK, TO-220FP, TO-220 and IPAK packages Datasheet − production data Figure 1. Internal schematic diagram Features • Very low on-resistance • Very low gate charge • High avalanche ruggedness • Low gate drive power loss Applications • Switching applications Description These devices are P-channel Power MOSFETs developed using the STripFET™ F6 technology, with a new trench gate structure. The resulting Power MOSFETs exhibit very low RDS(on) in all packages. , TAB AM11258v1 DPAK 1 3 TAB 1 2 3 TAB TO-220 3 2 1 TAB IPAK 1 2 3 TO-220FP Order codes VDS RDS(on) max ID STD10P6F6 -60 V 0.16 Ω -10 A STF10P6F6 STP10P6F6 STU10P6F6 Table 1. Device summary Order codes Marking Package Packing STD10P6F6 10P6F6 DPAK Tape and reel STF10P6F6 TO-220FP Tube STP10P6F6 TO-220 STU10P6F6 IPAK www.st.com |
类似零件编号 - STP10P6F6 |
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类似说明 - STP10P6F6 |
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