Wuxi NCE Power Co., Ltd

Page

V2.0

2

NCE0102A

http://www.ncepower.com

Electrical Characteristics (TA=25℃unless otherwise noted)

Parameter

Symbol

Condition

Min

Typ

Max

Unit

Off Characteristics

Drain-Source Breakdown Voltage

BVDSS

VGS=0V ID=250μA

100

110

-

V

Zero Gate Voltage Drain Current

IDSS

VDS=100V,VGS=0V

-

-

1

μA

Gate-Body Leakage Current

IGSS

VGS=±20V,VDS=0V

-

-

±100

nA

On Characteristics

(Note 3)

Gate Threshold Voltage

VGS(th)

VDS=VGS,ID=250μA

2.0

2.7

3.5

V

Drain-Source On-State Resistance

RDS(ON)

VGS=10V, ID=2A

-

220

240

mΩ

Forward Transconductance

gFS

VDS=5V,ID=2A

1

-

-

S

Dynamic Characteristics

(Note4)

Input Capacitance

Clss

-

406

-

PF

Output Capacitance

Coss

-

19

-

PF

Reverse Transfer Capacitance

Crss

VDS=50V,VGS=0V,

F=1.0MHz

-

12

-

PF

Switching Characteristics

(Note 4)

Turn-on Delay Time

td(on)

-

7

-

nS

Turn-on Rise Time

tr

-

12

-

nS

Turn-Off Delay Time

td(off)

-

13

-

nS

Turn-Off Fall Time

tf

VDD=50V, RL=25Ω

VGS=10V,RG=1Ω

-

9

-

nS

Total Gate Charge

Qg

-

13.6

nC

Gate-Source Charge

Qgs

-

3.1

-

nC

Gate-Drain Charge

Qgd

VDS=50V,ID=2A,

VGS=10V

-

2.9

-

nC

Drain-Source Diode Characteristics

Diode Forward Voltage

(Note 3)

VSD

VGS=0V,IS=2A

-

-

1.2

V

Diode Forward Current

(Note 2)

IS

-

-

2

A

Notes:

1.

Repetitive Rating: Pulse width limited by maximum junction temperature.

2.

Surface Mounted on FR4 Board, t ≤ 10 sec.

3.

Pulse Test: Pulse Width ≤ 300μs, Duty Cycle ≤ 2%.

4.

Guaranteed by design, not subject to production

5.

EAS condition : Tj=25 ,V

℃ DD=50V,VG=10V,L=0.5mH,Rg=25Ω