October 1992

4

Philips Semiconductors

Product specification

VHF linear push-pull power MOS transistor

BLF348

CHARACTERISTICS (per section)

SYMBOL

PARAMETER

CONDITIONS

MIN.

TYP.

MAX.

UNIT

drain-source breakdown voltage

65

−−

V

drain-source leakage current

−−

5mA

gate-source leakage current

−−

1

µA

gate-source threshold voltage

2

−

4.5

V

∆V

GS(th)

gate-source voltage difference of

both transistor sections

−−

100

mV

forward transconductance

5

7.5

−

S

forward transconductance ratio of

both transistor sections

0.9

−

1.1

drain-source on-state resistance

−

0.1

0.15

Ω

on-state drain current

−

37

−

A

input capacitance

−

495

−

pF

output capacitance

−

340

−

pF

feedback capacitance

−

40

−

pF

Fig.4

Temperature coefficient of gate-source

voltage as a function of drain current, typical

values per section.

handbook, halfpage

0

−5

MGP229

110

−4

−3

−2

−1

ID (A)

T.C.

(mV/K)

Fig.5

Drain current as a function of gate-source

voltage, typical values per section.

handbook, halfpage

0

5

10

20

60

20

0

40

MGP230

15

ID

(A)

VGS (V)