IXYS reserves the right to change limits, test conditions, and dimensions.

IXTA 36N30P IXTP 36N30P

IXTQ 36N30P

IXYS MOSFETs and IGBTs are covered by one or more

4,850,072

4,931,844

5,034,796

5,063,307

5,237,481

5,381,025

6,404,065B1 6,162,665

6,534,343

6,583,505

of the following U.S. patents:

4,835,592

4,881,106

5,017,508

5,049,961

5,187,117

5,486,715

6,306,728B1

6,259,123B1 6,306,728B1 6,683,344

Fig. 11. Capacitance

10

100

1000

10000

0

5

10

15

20

25

30

35

40

Ciss

Coss

Crss

f = 1MHz

Fig. 10. Gate Charge

0

1

2

3

4

5

6

7

8

9

10

0

10203040

506070

Fig. 7. Input Adm ittance

0

10

20

30

40

50

60

70

4.5

5

5.5

6

6.5

7

7.5

8

8.5

25ºC

-40ºC

Fig. 8. Transconductance

0

5

10

15

20

25

30

35

0

102030

40

506070

80

90

25ºC

125ºC

Fig. 9. Source Current vs.

Source-To-Drain Voltage

0

10

20

30

40

50

60

70

80

90

100

0.4

0.5

0.6

0.7

0.8

0.9

1

1.1

1.2

1.3

Fig. 12. Forw ard-Bias

Safe Operating Area

1

10

100

1000

10

100

1000

100µs

1ms

DC

10ms

25µs