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BU931ZPFI 数据表(PDF) 1 Page - Inchange Semiconductor Company Limited

部件名 BU931ZPFI
功能描述  isc Silicon NPN Darlington Power Transistor
PDF  2 Pages
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制造商  ISC [Inchange Semiconductor Company Limited]
网页  http://www.iscsemi.cn
标志 ISC - Inchange Semiconductor Company Limited

BU931ZPFI 数据表(HTML) 1 Page - Inchange Semiconductor Company Limited

  BU931ZPFI Datasheet HTML 1Page - Inchange Semiconductor Company Limited BU931ZPFI Datasheet HTML 2Page - Inchange Semiconductor Company Limited  
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isc website：www.iscsemi.com
isc & iscsemi is registered trademark
1
isc Silicon NPN Darlington Power Transistor
BU931ZPFI
DESCRIPTION
·
Collector-Emitter Sustaining Voltage-
: VCEO(SUS)= 350V(Min.)
·
High Reliability
·
Low Collector Saturation Voltage
·
Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
·
High ruggedness electronic ignitions
·
High voltage ignition coil driver
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
350
V
VCEO
Collector-Emitter Voltage
350
V
VEBO
Emitter-Base Voltage
6
V
IC
Collector Current- Continuous
20
A
IB
Base Current
5
A
PC
Collector Power Dissipation
@TC=25℃
60
W
Tj
Junction Temperature
150
℃
Tstg
Storage Temperature Range
-40~150
℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX
UNIT
Rth j-c
Thermal Resistance, Junction to Case
2.08
℃
/W


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