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2

isc N-Channel MOSFET Transistor

IRF630B

·

ELECTRICAL CHARACTERISTICS (TC=25℃)

SYMBOL

PARAMETER

CONDITIONS

MIN

MAX

UNIT

V(BR)DSS

Drain-Source Breakdown Voltage

VGS=0; ID=0.25mA

200

V

VGS(TH)

Gate Threshold Voltage

VDS= VGS; ID=1mA

2

4

V

RDS(ON)

Drain-Source On-stage Resistance

VGS=10V; ID=4.5A

0.4

Ω

IGSS

Gate Source Leakage Current

VGS=±30V;VDS=0

±

100

nA

IDSS

Zero Gate Voltage Drain Current

VDS=200V; VGS=0

10

uA

VSD

Diode Forward Voltage

IF=9A; VGS=0

1.5

V

NOTICE：

ISC reserves the rights to make changes of the content herein the datasheet at any time without

notification. The information contained herein is presented only as a guide for the applications of

our products.

ISC products are intended for usage in general electronic equipment. The products are not designed

for use in equipment which require specialized quality and/or reliability, or in equipment which

could have applications in hazardous environments, aerospace industry, or medical field. Please

contact us if you intend our products to be used in these special applications.

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incidental damages.