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IRF730AS 数据表(PDF) 2 Page - International Rectifier |
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IRF730AS 数据表(HTML) 2 Page - International Rectifier |
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2 / 10 page  IRF730AS/L 2 www.irf.com Parameter Min. Typ. Max. Units Conditions gfs Forward Transconductance 3.1 ––– ––– S VDS = 50V, ID = 3.3A Qg Total Gate Charge ––– ––– 22 ID = 3.5A Qgs Gate-to-Source Charge ––– ––– 5.8 nC VDS = 320V Qgd Gate-to-Drain ("Miller") Charge ––– ––– 9.3 VGS = 10V, See Fig. 6 and 13 td(on) Turn-On Delay Time ––– 10 ––– VDD = 200V tr Rise Time ––– 22 ––– ID = 3.5A td(off) Turn-Off Delay Time ––– 20 ––– RG = 12Ω tf Fall Time ––– 16 ––– RD = 57Ω,See Fig. 10 Ciss Input Capacitance ––– 600 ––– VGS = 0V Coss Output Capacitance ––– 103 ––– VDS = 25V Crss Reverse Transfer Capacitance ––– 4.0 ––– pF ƒ = 1.0MHz, See Fig. 5 Coss Output Capacitance ––– 890 ––– VGS = 0V, VDS = 1.0V, ƒ = 1.0MHz Coss Output Capacitance ––– 30 ––– VGS = 0V, VDS = 320V, ƒ = 1.0MHz Coss eff. Effective Output Capacitance ––– 45 ––– VGS = 0V, VDS = 0V to 320V
Parameter Min. Typ. Max. Units Conditions V(BR)DSS Drain-to-Source Breakdown Voltage 400 ––– ––– V VGS = 0V, ID = 250µA ∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient ––– 0.5 ––– V/°C Reference to 25°C, ID = 1mA RDS(on) Static Drain-to-Source On-Resistance ––– ––– 1.0 Ω VGS = 10V, ID = 3.3A VGS(th) Gate Threshold Voltage 2.0 ––– 4.5 V VDS = VGS, ID = 250µA ––– ––– 25 µA VDS = 400V, VGS = 0V ––– ––– 250 VDS = 320V, VGS = 0V, TJ = 125°C Gate-to-Source Forward Leakage ––– ––– 100 VGS = 30V Gate-to-Source Reverse Leakage ––– ––– -100 nA VGS = -30V Static @ TJ = 25°C (unless otherwise specified) IGSS IDSS Drain-to-Source Leakage Current Dynamic @ TJ = 25°C (unless otherwise specified) ns Parameter Typ. Max. Units EAS Single Pulse Avalanche Energy ––– 290 mJ IAR Avalanche Current ––– 5.5 A EAR Repetitive Avalanche Energy ––– 7.4 mJ Avalanche Characteristics S D G Parameter Min. Typ. Max. Units Conditions IS Continuous Source Current MOSFET symbol (Body Diode) ––– ––– showing the ISM Pulsed Source Current integral reverse (Body Diode) ––– ––– p-n junction diode. VSD Diode Forward Voltage ––– ––– 1.6 V TJ = 25°C, IS = 5.5A, VGS = 0V trr Reverse Recovery Time ––– 370 550 ns TJ = 25°C, IF = 3.5A Qrr Reverse RecoveryCharge ––– 1.6 2.4 µC di/dt = 100A/µs ton Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD) Diode Characteristics 5.5 22 A Thermal Resistance Parameter Typ. Max. Units RθJC Junction-to-Case ––– 1.7 °C/W RθJA Junction-to-Ambient ( PCB Mounted, steady-state)* ––– 40 |
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