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STP200NF04L 数据表(PDF) 2 Page - STMicroelectronics

部件名 STP200NF04L
功能描述  N-CHANNEL 40V - 3 m ohm - 120 A TO-220/D2PAK/I2PAK STripFET II MOSFET
PDF  12 Pages
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制造商  STMICROELECTRONICS [STMicroelectronics]
网页  http://www.st.com
标志 STMICROELECTRONICS - STMicroelectronics

STP200NF04L 数据表(HTML) 2 Page - STMicroelectronics

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STP200NF04L - STB200NF04L - STB200NF04L-1
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Table 3: Absolute Maximum ratings
(1)ISD ≤ 100 A, di/dt ≤ 240 A/µs, VDD ≤ 32 , Tj ≤ TJMAX
(2) Pulse width limited by safe operating area.
(3) Starting Tj = 25°C, IAR = 50A, VDD = 30V
(**) Current limited by Package
Table 4: Thermal Data
(*)When mounted on 1 inch² FR4 2oZ Cu
ELECTRICAL CHARACTERISTICS (TCASE =25°C UNLESS OTHERWISE SPECIFIED)
Table 5: On/Off
Symbol
Parameter
Value
Unit
VDS
Drain-source Voltage (VGS = 0)
40
V
VGDR
Drain-gate Voltage (RGS=20 KΩ)
40
V
VGS
Gate- source Voltage
± 16
V
ID (**)
Drain Current (continuous) at TC = 25°C
120
A
ID
Drain Current (continuous) at TC = 100°C
120
A
IDM (2)
Drain Current (pulsed)
480
A
PTOT
Total Dissipation at TC = 25°C
300
W
Derating Factor
2
W/°C
dv/dt (1)
Peak Diode Recovery voltage slope
3.6
V/ns
EAS (3)
Single Pulse Avalanche Energy
1.4
J
Tstg
Storage Temperature
-55 to 175
°C
Tj
Max. Operating Junction Temperature
TO-220/I²PAK
D²PAK
Unit
Rthj-case
Thermal Resistance Junction-case
Max
0.50
°C/W
Rthj-pcb (*)
Thermal Resistance Junction-pcb
Max
35
°C/W
Rthja
Thermal Resistance Junction-ambient
Max
62.5
--
Tl
Maximum Lead Temperature For Soldering Purpose
300
--
°C
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
V(BR)DSS
Drain-source
Breakdown Voltage
ID = 250 µA, VGS = 0
40
V
IDSS
Zero Gate Voltage
Drain Current (VGS = 0)
VDS= Max Rating
VD = Max Rating, TC= 125 °C
1
10
µA
µA
IGSS
Gate-body Leakage
Current (VDS = 0)
VGS = ± 16V
±100
nA
VGS(th)
Gate Threshold Voltage VDS = VGS, ID = 250µA
1
4V
RDS(on)
Static Drain-source On
Resistance
VGS = 10 V, ID = 50 A
VGS = 5 V, ID = 50 A
TO-220
I²PAK
3.3
3.8
3.8
4.6
m
m
VGS = 10 V, ID = 50 A
VGS = 5 V, ID = 50 A
D²PAK
3.0
3.5
3.5
4.3
m
m



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