MAC8SD datasheet(2/7 Pages) ONSEMI

2 / 7 page

MAC8SD, MAC8SM, MAC8SN

http://onsemi.com

THERMAL CHARACTERISTICS

Characteristic

Symbol

Value

Unit

Thermal Resistance,

Junction−to−Case

Junction−to−Ambient

RqJC

RqJA

2.2

62.5

°C/W

Maximum Lead Temperature for Soldering Purposes 1/8

″ from Case for 10 Seconds

260

°C

ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted; Electricals apply in both directions)

Characteristic

Symbol

Min

Typ

Max

Unit

OFF CHARACTERISTICS

Peak Repetitive Blocking Current

(VD = Rated VDRM, VRRM; Gate Open)

TJ = 25°C

TJ = 110°C

IDRM,

IRRM

−

0.01

2.0

ON CHARACTERISTICS

Peak On-State Voltage (Note ) (ITM = 11A)

VTM

−

1.85

Gate Trigger Current (Continuous dc) (VD = 12 V, RL = 100 W)

MT2(+), G(+)

MT2(+), G(−)

MT2(−), G(−)

IGT

−

2.0

3.0

5.0

Holding Current (VD = 12V, Gate Open, Initiating Current = 150mA)

−

3.0

Latching Current (VD = 24V, IG = 5mA)

MT2(+), G(+)

MT2(−), G(−)

MT2(+), G(−)

−

5.0

Gate Trigger Voltage (Continuous dc) (VD = 12 V, RL = 100W)

MT2(+), G(+)

MT2(+), G(−)

MT2(−), G(−)

VGT

0.45

0.62

0.60

0.65

1.5

DYNAMIC CHARACTERISTICS

Rate of Change of Commutating Current

VD = 400 V, ITM = 3.5 A, Commutating dv/dt = 10 V m/sec,

Gate Open, TJ = 110°C, f = 500 Hz, Snubber: CS = 0.01 mF,

RS =15 W, See Figure 16.)

di/dt(c)

8.0

−

A/ms

Critical Rate of Rise of Off-State Voltage

(VD = Rate VDRM, Exponential Waveform, RGK = 510 W, TJ = 110°C)

dv/dt

−

2. Indicates Pulse Test: Pulse Width

≤ 2.0 ms, Duty Cycle ≤ 2%.

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