ADN2821 datasheet(3/8 Pages) AD

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Preliminary Technical Data

ADN2821

Rev. PrL | Page 3 of 8

ELECTRICAL SPECIFICATIONS

Table 1.

Parameter

Conditions1

Min

Typ

Max

Units

DYNAMIC PERFORMANCE

Bandwidth (BW)2

−3 dB

9.5

GHz

Total Input RMS Noise (IRMS)2

DC to 10GHz

1.1

1.3

µA

Small Signal Trans-impedance (TZ)

ADN2821_2, 100 MHz

1500

2000

2500

V/A

ADN2821_5, 100 MHz

3500

5000

6500

V/A

ADN2821_10, 100 MHz

6000

10000

15000

V/A

Trans-impedance Ripple2

50 MHz to 5 GHz

±1

Group Delay Variation2

50 MHz to 8 GHz

±10

Low Frequency Cut-Off

CLF = 1000 pF

kHz

Output Return Loss2

DC to 8 GHz, differential

−12

−10

Total pk-pk Jitter2

IIN,PK- PK = 2.0 mA, 4 dB ER

TBD

Input Overload Current3, 2

Pav, 10-12 BER, 10 dB ER

TBD

3.25

dBm

Maximum Output Swing

p-p diff, IIN,PK- PK = 2.5mA

400

520

650

Linear Output Range

p-p, < 1 dB gain compression

400

Power Supply Noise Rejection

<10MHz

TBD

DC PERFORMANCE

Power Dissipation

IIN,AVE = 0.1 mA, Vcc = 3.3 V ± 5%

150

200

Input Voltage

0.85

Output Impedance

single-ended

Ω

PD FILTER Resistance

200

Ω

PD FILTER Capacitance

RSSI Sensitivity

IIN, AVE = 0 uA to 1 mA

0.8

V/mA

RSSI Offset

IIN, AVE = 0 uA

TBD

1 Min/Max Vcc = +3.3V ± 0.3V, Ta = −40°C to +95°C; Typ Vcc = 3.3V, Tambient = +25C

2 Photodiode capacitance CD = 0.22pF ± 0.04pF, Photodiode resistance = 15Ω, CB = 100pF Bond inductance LIN = LFILTER = 0.3nH ± 0.1nH; LOUT = LOUTB = 0.5nH ± 0.1nH

Load impedance = 50Ω (each output, AC coupled)

3 10-12 BER, 10dB extinction ratio, 0.85 A/W PD responsivity

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