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ADP1621ARMZ-R7 数据表(PDF) 20 Page - Analog Devices |
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ADP1621ARMZ-R7 数据表(HTML) 20 Page - Analog Devices |
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20 / 32 page ![]() ADP1621 Rev. A | Page 20 of 32 LAYOUT CONSIDERATIONS Layout is important for all switching regulators, but is par- ticularly important for regulators with high switching frequencies. To achieve high efficiency, good regulation, and stability, a well- designed printed circuit board layout is required. A sample PCB layout for the standard boost converter circuit shown in Figure 33 is given in Figure 32. Follow these guidelines when designing printed circuit boards: • Keep the low ESR bypass input capacitor of 0.1 μF or higher close to IN/PIN and GND. • Keep the high current path from Bulk Input Capacitor C1 through Inductor L1 and MOSFET M1 to PGND as short as possible. • Keep the high current path from Bulk Input Capacitor C1 through Inductor L1, Diode D1, and Output Capacitor COUT to PGND as short as possible. Place COUT as close to PGND as possible to reduce ground bouncing. • Keep high current traces as short and wide as possible to minimize parasitic series inductance, which causes spiking and electromagnetic interference (EMI). • To minimize switching noise, the drain of the power MOSFET should be placed very close to the inductor, and the source of the MOSFET (or the bottom side of the sense resistor) should be connected directly to the power GND plane. Use wide copper traces on the drain and on the source of the MOSFET to minimize parasitic inductance and resistance. Parasitic inductance can lead to excessive ringing during switching transitions, and parasitic resistance reduces the converter efficiency. Make sure that the MOSFET selected is capable of handling the total power loss (conduction plus transition losses) in the application circuit. • Avoid routing high impedance traces near any node con- nected to the switch node (the MOSFET drain) or near Inductor L1 to prevent radiated switching-noise injection. • Add an extra copper plane at the connection of the MOSFET drain and the anode of the diode to help dissipate the heat generated by losses in those components. • Avoid ground loops by having one central ground node on the PCB. If this is impractical, place the power ground with high current levels physically closer to the PCB ground terminal. The analog, low current-level ground should be placed farther from the PCB ground terminal. • Minimize the length of the PCB trace between the GATE pin and the MOSFET gate. The parasitic inductance in this PCB trace can give rise to excessive voltage ringing at the MOSFET gate and drain, as well as the regulator output. It is recommended to add 5 Ω of resistance for every inch of PCB trace. This helps to reduce the overshoot and ringing at the drain and the output. However, this added resistance increases the rise and fall times of the MOSFET; thus, the switching loss in the MOSFET is increased. • Place the feedback resistors as close to FB as possible to prevent high frequency switching-noise injection. • Place the top of the upper feedback resistor, R1, as close as possible to the top of COUT for optimum output voltage sensing. • If a current-sense resistor is connected between the source of the MOSFET and PGND, ensure that the capacitance from CS to PGND is minimized. • Place the compensation components as close as possible to COMP. VIN VOUT COUT1 COUT2 VIAS TO GND PLANE VIAS TO 2ND LAYER REMOTE OUTPUT SENSING COUT3 L1 GND C1 GND SDSN ADP1621 RFREQ GATE D1 M1 Figure 32. PCB Layout of the Circuit Shown in Figure 33 (2-layer PCB) |
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