1997 Mar 13

2

Philips Semiconductors

Product specification

N-channel enhancement mode vertical

D-MOS transistor

BSP030

FEATURES

• High speed switching

• No secondary breakdown

• Very low on-state resistance.

APPLICATIONS

• Motor and actuator drivers

• Power management

• Synchronized rectification.

DESCRIPTION

N-channel enhancement mode vertical D-MOS transistor

in a 4-pin plastic SOT223 SMD package.

CAUTION

The device is supplied in an antistatic package.

The gate-source input must be protected against static

discharge during transport or handling.

PINNING - SOT223

PIN

SYMBOL

DESCRIPTION

1

g

gate

2

d

drain

3

s

source

4

d

drain

handbook, halfpage

MAM054 - 1

4

123

Top view

s

d

g

Fig.1 Simplified outline and symbol.

QUICK REFERENCE DATA

SYMBOL

PARAMETER

CONDITIONS

MIN.

MAX.

UNIT

drain-source voltage (DC)

−

30

V

source-drain diode forward voltage

−

1V

gate-source voltage (DC)

−±20

V

gate-source threshold voltage

1

2.8

V

drain current (DC)

−

10

A

drain-source on-state resistance

−

0.03

Ω

total power dissipation

−

5W