BSP205 datasheet(2/12 Pages) PHILIPS

部件名	BSP205

功能描述	P-channel enhancement mode vertical D-MOS transistor

PDF	12 Pages

Scroll/Zoom	100%

制造商	PHILIPS [NXP Semiconductors]

网页	http://www.nxp.com

标志

2 / 12 page

April 1995

Philips Semiconductors

Product speciﬁcation

P-channel enhancement mode vertical

D-MOS transistor

BSP205

DESCRIPTION

P-channel enhancement mode

vertical D-MOS transistor in a

miniature SOT223 envelope and

intended for use in relay, high-speed

and line-transformer drivers.

FEATURES

• Very low R

DS(on)

• Direct interface to C-MOS, TTL,

etc.

• High-speed switching

• No secondary breakdown

PINNING - SOT223

= gate

= drain

= source

= drain

QUICK REFERENCE DATA

Drain-source voltage

−V

max.

60 V

Drain current (DC)

−ID

max.

275 mA

Drain-source ON-resistance

−I

D = 200 mA; −VGS = 10 V

RDS(on)

max.

Ω

Gate threshold voltage

−V

GS(th)

max.

3.5 V

PIN CONFIGURATION

Marking code

BSP205

Fig.1 Simplified outline and symbol.

handbook, halfpage

MAM121

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