2SC5519 datasheet(2/11 Pages) PANASONIC

2 / 11 page

Parameter

Emitter cutoff current

Forward current transfer ratio

Base to emitter saturation voltage

Transition frequency

Fall time

Storage time

Rating

1500

600

23*3

150

-55 to +150

Unit

°C

Symbol

VCBO

VCES

VCEO

VEBO

ICP

Tstg

s Absolute Maximum Ratings

Parameter

Collector to base voltage

Collector to emitter voltage

Emitter to base voltage

Peak collector current

Collector current

Base current

Collector power dissipation

Junction temperature

Storage temperature

50*1

3.0*2

*1)TC=25

°C *2)Ta=25°C (Without heat sink)

*3)Non-repetitive peak collector current.

min

Conditions

VCB=1000V,IE=0

VCB=1500V,IE=0

VEB=7V,IC=0

VCE=5V,IC=6.5A

IC=6.5A,IB=1.63A

VCE=10V,IC=0.1A,f=0.5MHz

IC=6.5A,IB1=1.63A,IB2=-3.25A

s Electrical Characteristics(TC=25

°C)

Collector cutoff current

Collector to emitter saturation

voltage

Symbol

ICBO

IEBO

fFE

VCE(sat)

VBE(sat)

Tstg

typ

max

1.5

0.2

2.7

Unit

µA

MHz

µs

2SC5514

Horizontal Deflection Output Transistor

15.5

±0.5

3.0

±0.3

φ3.2±0.1

5.45

±0.3

123

5.45

±0.3

1.1

±0.1

2.0

±0.2

4.0

0.7

±0.1

TOP-3E

Unit:mm

2SC5519 数据表(PDF) 2 Page - Panasonic Semiconductor

2SC5519 数据表(HTML) 2 Page - Panasonic Semiconductor

Html Pages

1 2 3 4 5 6 7 8 9 10 11

数据表下载

链接网址

2SC5519 数据表(PDF) 2 Page - Panasonic Semiconductor

2SC5519 数据表(HTML) 2 Page - Panasonic Semiconductor

Html Pages

1 2 3 4 5 6 7 8 9 10 11

数据表 下载

链接网址

数据表下载