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BSP304 数据表(PDF) 3 Page - NXP Semiconductors |
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BSP304 数据表(HTML) 3 Page - NXP Semiconductors |
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3 / 9 page ![]() 1995 Apr 07 3 Philips Semiconductors Product specification P-channel enhancement mode vertical D-MOS transistors BSP304; BSP304A LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). THERMAL CHARACTERISTICS Note to the “Limiting values” and “Thermal characteristics” 1. Device mounted on a printed-circuit board, maximum lead length 4 mm; mounting pad for drain lead minimum 1 cm2. CHARACTERISTICS Tj =25 °C unless otherwise specified. SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VDS drain-source voltage (DC) −−300 V VGSO gate-source voltage (DC) open drain −±20 V ID drain current (DC) −−170 mA IDM peak drain current −−0.75 A Ptot total power dissipation up to Tamb =25 °C; note 1 − 1W Tstg storage temperature −65 +150 °C Tj operating junction temperature − 150 °C SYMBOL PARAMETER CONDITIONS VALUE UNIT Rth j-a thermal resistance from junction to ambient note 1 125 K/W SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT V(BR)DSS drain-source breakdown voltage VGS = 0; ID = −10 µA −300 −− V VGSth gate-source threshold voltage VDS =VGS; ID = −1mA −1.7 −−2.55 V IDSS drain-source leakage current VGS = 0; VDS = −240 V −−−100 nA IGSS gate leakage current VGS = ±20 V; VDS =0 −−±100 nA RDSon drain-source on-state resistance VGS = −10 V; ID = −170 mA −− 17 Ω yfs forward transfer admittance VDS = −25 V; ID = −170 mA 100 −− mS Ciss input capacitance VGS = 0; VDS = −25 V; f = 1 MHz − 60 90 pF Coss output capacitance VGS = 0; VDS = −25 V; f = 1 MHz − 15 30 pF Crss reverse transfer capacitance VGS = 0; VDS = −20 V; f = 1 MHz − 515 pF Switching times (see Figs 2 and 3) ton turn-on time VGS =0to −10 V; VDD = −50 V; ID = −250 mA − 510 ns toff turn-off time VGS = −10 to 0 V; VDD = −50 V; ID = −250 mA − 15 30 ns |
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