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BSP304 数据表(PDF) 3 Page - NXP Semiconductors

部件名 BSP304
功能描述  P-channel enhancement mode vertical D-MOS transistors
PDF  9 Pages
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制造商  PHILIPS [NXP Semiconductors]
网页  http://www.nxp.com
标志 PHILIPS - NXP Semiconductors

BSP304 数据表(HTML) 3 Page - NXP Semiconductors

  BSP304 Datasheet HTML 1Page - NXP Semiconductors BSP304 Datasheet HTML 2Page - NXP Semiconductors BSP304 Datasheet HTML 3Page - NXP Semiconductors BSP304 Datasheet HTML 4Page - NXP Semiconductors BSP304 Datasheet HTML 5Page - NXP Semiconductors BSP304 Datasheet HTML 6Page - NXP Semiconductors BSP304 Datasheet HTML 7Page - NXP Semiconductors BSP304 Datasheet HTML 8Page - NXP Semiconductors BSP304 Datasheet HTML 9Page - NXP Semiconductors  
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1995 Apr 07
3
Philips Semiconductors
Product specification
P-channel enhancement mode
vertical D-MOS transistors
BSP304; BSP304A
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
THERMAL CHARACTERISTICS
Note to the “Limiting values” and “Thermal characteristics”
1. Device mounted on a printed-circuit board, maximum lead length 4 mm; mounting pad for drain lead minimum 1 cm2.
CHARACTERISTICS
Tj =25 °C unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
VDS
drain-source voltage (DC)
−−300
V
VGSO
gate-source voltage (DC)
open drain
−±20
V
ID
drain current (DC)
−−170
mA
IDM
peak drain current
−−0.75
A
Ptot
total power dissipation
up to Tamb =25 °C; note 1
1W
Tstg
storage temperature
−65
+150
°C
Tj
operating junction temperature
150
°C
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
Rth j-a
thermal resistance from junction to ambient
note 1
125
K/W
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
V(BR)DSS
drain-source breakdown voltage
VGS = 0; ID = −10 µA
−300
−−
V
VGSth
gate-source threshold voltage
VDS =VGS; ID = −1mA
−1.7
−−2.55 V
IDSS
drain-source leakage current
VGS = 0; VDS = −240 V
−−−100
nA
IGSS
gate leakage current
VGS = ±20 V; VDS =0
−−±100
nA
RDSon
drain-source on-state resistance
VGS = −10 V; ID = −170 mA
−−
17
yfs
forward transfer admittance
VDS = −25 V; ID = −170 mA
100
−−
mS
Ciss
input capacitance
VGS = 0; VDS = −25 V; f = 1 MHz −
60
90
pF
Coss
output capacitance
VGS = 0; VDS = −25 V; f = 1 MHz −
15
30
pF
Crss
reverse transfer capacitance
VGS = 0; VDS = −20 V; f = 1 MHz −
515
pF
Switching times (see Figs 2 and 3)
ton
turn-on time
VGS =0to −10 V; VDD = −50 V;
ID = −250 mA
510
ns
toff
turn-off time
VGS = −10 to 0 V; VDD = −50 V;
ID = −250 mA
15
30
ns



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