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SFH4246R 数据表(PDF) 3 Page - ams AG |
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SFH4246R 数据表(HTML) 3 Page - ams AG |
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3 / 17 page ![]() SFH 4246R 3 Version 1.1 | 2020-09-01 Characteristics I F = 100 mA; tp = 20 ms; TA = 25 °C Parameter Symbol Values Peak wavelength λ peak typ. 950 nm Centroid wavelength λ centroid typ. 940 nm Spectral bandwidth at 50% I rel,max (FWHM) ∆λ typ. 42 nm Half angle φ typ. 12 ° Dimensions of active chip area L x W typ. 0.3 x 0.3 mm x mm Rise time (10% / 90%) I F = 100 mA; RL = 50 Ω t r typ. 12 ns Fall time (10% / 90%) I F = 100 mA; RL = 50 Ω t f typ. 12 ns Forward voltage 4) V F typ. max. 1.40 V 1.70 V Forward voltage 4) I F = 1 A; tp = 100 µs V F typ. max. 2.3 V 2.9 V Reverse current 3) V R = 5 V I R typ. max. 0.01 µA 10 µA Radiant intensity 1) I F = 1 A; tp = 100 µs I e typ. 750 mW/sr Total radiant flux 5) Φ e typ. 65 mW Temperature coefficient of voltage TC V typ. -1.3 mV / K Temperature coefficient of brightness TC I typ. -0.5 % / K Temperature coefficient of wavelength TC λ typ. 0.3 nm / K Thermal resistance junction solder point real 6) R thJS real max. 200 K / W Thermal resistance junction ambient real R thJA max. 450 K / W |
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