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FS02...N
SURFACE MOUNT SCR
0
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
0.2
0.4
0.6
0.8
P (W)
α
360 º
Fig. 1: Maximum average power dissipation
versus average on-state current
0
20
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
40
60
80
100 120 140
P (W)
Fig. 2: Correlation between maximum
average power dissipation and maximum
allowable temperature (Tamb and T tab).
T tab (ºC)
-85
-95
-105
-115
-125
Fig. 3: Average on-state current versus tab
temperature
10.0
9.0
8.0
7.0
6.0
5.0
4.0
3.0
2.0
1.0
0.0
Igt (Tj)
Fig. 5: Relative variation of gate trigger current
and holding current versus junction temperature.
-40 -20
0
60
80 100 120 140
Igt (Tj = 25 ºC)
Ih (Tj)
Ih (Tj = 25 ºC)
40
20
Ih
Igt
1
10
100
1000
Fig. 6: Non repetitive surge peak on-state
current versus number of cycles.
25
20
15
10
5
0
I TSM (A)
Tj initial = 25 ºC
1.00
0.10
0.01
Zth(j-a) / Rth(j-a)
Fig. 4: Relative variation of thermal impedance
junction to ambient versus pulse duration.
1E-3
1E-2
1E-1
1E+0
1E+1
1E+2 5E+2
Standard foot print,
e (Cu) = 35 µm
Jun - 02
Rth (j-l)
Rth (j-a)
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
I T(AV) (A)
0
20
40
60
80
100
120
α = 180 º
10
30
50
70
90
110
130
DC
1.0
1.2 1.4
α = 30 º
α = 60 º
α = 90 º
α = 120 º
α = 180 º
DC
Tamb (ºC)
Tj (ºC)
Number of cycles
tp (s)
T lead (ºC)
IT(AV)(A)
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