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BST82 数据表(PDF) 6 Page - NXP Semiconductors |
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BST82 数据表(HTML) 6 Page - NXP Semiconductors |
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6 / 12 page ![]() April 1995 6 Philips Semiconductors Product specification N-channel enhancement mode vertical D-MOS transistor BST82 Fig.6 Tj =25 °C; typical values. handbook, halfpage 010 1 0 0.2 0.4 0.6 0.8 24 6 ID (A) 8 MDA763 VDS (V) VGS = 10 V 5 V 6 V 7 V 8 V 9 V 3 V 4 V Fig.7 Power derating curve. handbook, halfpage 0 50 100 Tamb (°C) Ptot (mW) 200 400 300 100 0 200 150 MDA769 Fig.8 typ. values at 150 mA/5 V. k R DS (on) at Tj R DS (on) at 25 ° C --------------------------------------------- ; = handbook, halfpage −50 0 50 k Tj (°C) 150 3 0.5 2.5 100 2 1.5 1 MDA735 Fig.9 VGS(th) at 1 mA; typical values. k V GS th () at Tj V GS th () at 25 °C --------------------------------------------- ; = handbook, halfpage −50 0 50 k Tj (°C) 150 1.2 0.7 1.1 100 1 0.9 0.8 MDA736 |
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