AlGaAs SPST Non-Reflective PIN Diode Switch

Rev 2.0

MA4AGSW1A

2

Electrical Specifications @ 25 ° C (On Wafer Measurements )

Frequency Range = 10 – 50 GHz

Parameter

Ports

Bias Conditions

Specification

Comments

Insertion Loss

J1 – J2

D.C. Bias 1 =

-1.35 V @ -10 mA

D.C. Bias B =

-1.35 V @ 0 mA

1.2 dB

Typical

Value at 50 GHz

Input Return Loss

J1

( Terminate J2

into 50Ω )

D.C. Bias 1 =

-1.35 V @ -10 mA

D.C. Bias B =

-1.35 V @ 0 mA

15 dB

Typical

Value at 50 GHz

In Insertion Loss

State

Output Return Loss

( Insertion Loss )

J2

(Terminate J1

into 50Ω )

D.C. Bias 1 =

-1.35 V @ -10 mA

D.C. Bias B =

-1.35 V @ 0 mA

18 dB

Typical

Value at 50 GHz

In Insertion Loss

State

Output Return Loss

( Isolation )

J2

D.C. Bias 1 =

+1.35 V @ +10 mA

D.C. Bias B =

+1.35 V @ +10 mA

18 dB

Typical

Value at 50 GHz

In Isolation State

Isolation

J1 – J2

D.C. Bias 1 =

+1.35 V @ +10 mA

D.C. Bias B =

+1.35 V @ +10 mA

30 dB

Typical

Value at 50 GHz

Switching Speed

( 10 % - 90 % RF

Voltage )

J1 – J2

+/- 5V PIN Diode TTL

Driver @ 1 MHz Rep

Rate

10 nS

Typical

Value at 10 GHz

Notes:

1. “ D.C. Bias 1” and “ D.C. Bias B ” Nodes can be connected together.

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