I

TSM

110

1

10

100

Tj initia l = 25 C

o

I

TSM

tp (ms)

Fig.11 : Non repetitive surge peak on-state cur-

rent for a sinusoidal pulse with width : tp

≤ 10ms,

and corresponding value of I

00.5

1

1.522.5

33.5

44.5

0.1

1

10

100

I

(A)

TM

Tj ini tia l

25 C

o

Tj max

V

(V)

TM

Tj max

Vto =0.9 8V

Rt =0.1 80

Fig.12 : On-state characteristics (maximum val-

ues).

2.6

2.4

2.2

2.0

1.8

1.6

1.4

1.2

1.0

0.8

0.6

0.4

Igt

Tj( C)

o

Ih

-40

-20

0

20

40

60

80

100

120 140

Igt[Tj]

Igt[Tj=25 C]

o

Ih[Tj]

Ih[Tj=25 C]

o

Fig.9 : Relative variation of gate trigger current and

holding current versus junction temperature.

1

10

100

1000

0

5

10

15

20

I

(A)

TSM

Tj ini tia l = 25 C

o

Number of cycles

Fig.10 : Non repetitive surge peak on-state current

versus number of cycles.

1E-3

1E-2

1E-1

1 E+0

1 E+1

1 E +2 5 E+2

0.01

0.10

1.00

Zth(j-a)/Rth(j-a)

tp (s )

Fig.7 : Relative variation of thermal impedance

junction to ambient versus pulse duration

(TO202-2).

1E-3

1E-2

1E-1

1 E +0

1 E +1

1E +2 5E +2

0.01

0.10

1.00

Zth/Rth

Zth (j-c)

Zt h( j-a )

tp(s )

Fig.6 : Relative variation of thermal impedance

versus pulse duration (TO202-1).

®

Z0410xE/F

4/6