LE A P2W

3 Version 1.12 | 2020-11-05

Characteristics

T

Board = 25 °C; IF = 24000 mA; f = 1000 Hz; tint = 100 ms; D = 0.25; all chips operated in parallel

Parameter

Symbol

Values

Peak Wavelength

λ

peak

typ.

624 nm

Dominant Wavelength 3)

λ

dom

min.

typ.

max.

612 nm

617 nm

624 nm

Spectral bandwidth at 50% I

rel,max

∆λ

typ.

18 nm

Viewing angle at 50% I

V

2φ

typ.

120 °

Radiating surface

A

color

typ.

2.6 x 3.2 mm²

Partial Flux acc. CIE 127:2007 4)

I

F = 24000 mA

Φ

E/V, 120°

typ.

0.82

Forward Voltage 5)

I

F = 24000 mA; all chips operated in parallel

V

F

min.

typ.

max.

2.80 V

3.00 V

4.00 V

Deviation of forward voltage of all chips

V

F

max.

135 mV

Reverse voltage (ESD device)

V

R ESD

min.

45 V

Reverse voltage 2)

I

R = 20 mA

V

R

max.

1.2 V

Real thermal resistance junction/board 6)

R

thJB real

typ.

max.

0.6

0.7

Electrical thermal resistance junction/board 6)

with efficiency η

e = 13 %

R

thJB elec.

typ.

max.

0.52

0.61