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LEUWS2WP-RBSB-BQ 数据表(PDF) 3 Page - ams AG |
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LEUWS2WP-RBSB-BQ 数据表(HTML) 3 Page - ams AG |
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3 / 21 page ![]() LE UW S2WP 3 Version 1.3 | 2021-07-14 Characteristics I F = 1400 mA; TS = 25 °C; per chip Parameter Symbol Values Chromaticity Coordinate 3) Cx Cy typ. typ. 0.321 0.327 Viewing angle at 50% I V 2φ typ. 130 ° Radiating surface A color typ. 2.5 x 3.2 mm² Partial Flux acc. CIE 127:2007 4) I F = 1400 mA Φ E/V, 120° typ. 0.77 Forward Voltage 5) I F = 1400 mA; per Chip V F min. typ. max. 2.80 V 2.95 V 3.50 V Reverse voltage (ESD device) V R ESD min. 45 V Reverse voltage 2) I R = 20 mA V R max. 1.2 V Real thermal resistance junction/solderpoint 6) R thJS real typ. max. 0.70 K / W 0.80 K / W Electrical thermal resistance junction/solderpoint 6) with efficiency η e = 29 % R thJS elec. typ. max. 0.50 K / W 0.57 K / W |
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