GTRA362002FC-V1-R0 datasheet(1/8 Pages) WOLFSPEED

部件名	GTRA362002FC-V1-R0

功能描述	Thermally-Enhanced High Power RF GaN on SiC HEMT 200 W, 48 V, 3400 – 3600 MHz

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制造商	WOLFSPEED [WOLFSPEED, INC.]

网页	https://www.wolfspeed.com/

标志

1 / 8 page

All published data at TCASE = 25°C unless otherwise indicated

ESD: Electrostatic discharge sensitive device—observe handling precautions!

Rev. 06, 2023-06-23

The information in this document is subject to change without notice.

4600 Silicon Drive | Durham, NC 27703 | Tel: +1.919.313.5300

GTRA362002FC

Package H-37248C-4

Thermally-Enhanced High Power RF GaN on SiC HEMT

200 W, 48 V, 3400 – 3600 MHz

Features

• GaN on SiC HEMT technology

• Input matched

• Asymmetrical Doherty design

- Main: P3dB = 85 W Typ

- Peak: P3dB = 115 W Typ

• Typical Pulsed CW performance, 3500 MHz, 48 V,

combined outputs

- Output power at P3dB = 200 W

- Efficiency = 60%

- Gain = 12.5 dB

• Capable of handling 10:1 VSWR @50 V, 30 W (WCDMA)

output power

• Human Body Model Class 1A, (per ANSI/ESDA/JEDEC

JS-001)

• Low thermal resistance

• Pb-free and RoHS compliant

Description

The GTRA362002FC is a 200-watt (P3dB) GaN on SiC high electron mobil-

ity transistor (HEMT) designed for use in multi-standard cellular power

amplifier applications. It features input matching, high efficiency, and a

thermally-enhanced package with earless flange.

RF Characteristics

Single-carrier WCDMA Specifications (tested in Wolfspeed Doherty production test fixture)

VDD = 48 V, IDQ = 110 mA, POUT = 29 W avg, VGS(peak) = VGS @IDQ = 140 mA – 2.0 V, ƒ = 3600 MHz, 3GPP signal, channel bandwidth = 3.84

MHz, peak/average = 10 dB @ 0.01% CCDF

Characteristic

Symbol

Min

Typ

Max

Unit

Gain

Gps

12.5

13.5

—

dB

Drain Efficiency

hD

38

42

—

%

Adjacent Channel Power Ratio

ACPR

—

–29

–26

dBc

Output PAR @ 0.01% CCDF

OPAR

7

7.7

—

dB

-60

-40

-20

0

20

40

60

0

4

8

12

16

20

24

32

37

42

47

52

Average Output Power (dBm)

Single-carrier WCDMA Drive-up

VDD = 48 V, IDQ(MAIN) = 110 mA,

VGS(PEAK) = -5.5 V, ƒ = 3600 MHz,

3GPP WCDMA signal, PAR = 10 dB,

3.84 MHz BW

Gain

Efficiency

PAR @ 0.01% CCDF

gtra362002fc_g1

GTRA362002FC

类似零件编号 - GTRA362002FC-V1-R0

制造商	部件名	数据表	功能描述
Cree, Inc	GTRA362002FC	233Kb / 5P	Thermally-Enhanced High Power RF GaN on SiC HEMT 200 W, 48 V, 3400 ??3600 MHz

More results

类似说明 - GTRA362002FC-V1-R0

制造商	部件名	数据表	功能描述
Cree, Inc	GTRA362002FC	233Kb / 5P	Thermally-Enhanced High Power RF GaN on SiC HEMT 200 W, 48 V, 3400 ??3600 MHz
	GTRA362802FC	282Kb / 5P	Thermally-Enhanced High Power RF GaN on SiC HEMT 280 W, 48 V, 3400 ??3600 MHz
	GTRA364002FC	279Kb / 5P	Thermally-Enhanced High Power RF GaN on SiC HEMT 400 W, 48 V, 3400 ??3600 MHz
	GTRA374902FC	2Mb / 8P	Thermally-Enhanced High Power RF GaN on SiC HEMT 450 W, 48 V, 3600 ??3700 MHz
	GTRA384802FC	1Mb / 5P	Thermally-Enhanced High Power RF GaN on SiC HEMT 400 W, 48 V, 3600 ??3800 MHz
WOLFSPEED, INC.	GTRA360502M-V1	844Kb / 9P	Thermally-Enhanced High Power RF GaN on SiC HEMT 50 W, 48 V, 3400 – 3800 MHz Rev. 04, 2023-06-27
	GTRA362802FC-V1	553Kb / 8P	Thermally-Enhanced High Power RF GaN on SiC HEMT 280 W, 48 V, 3400 – 3600 MHz Rev. 04.3, 2022-1-27
	GTRA384802FC-V1	585Kb / 9P	Thermally-Enhanced High Power RF GaN on SiC HEMT 400 W, 48 V, 3600 – 3800 MHz Rev. 03.1, 2022-1-27
	GTRA364002FC	511Kb / 8P	Thermally-Enhanced High Power RF GaN on SiC HEMT 400 W, 48 V, 3400 – 3600 MHz Rev. 04.3, 2022-1-27
	GTRA374902FC	459Kb / 8P	Thermally-Enhanced High Power RF GaN on SiC HEMT 450 W, 48 V, 3600 – 3700 MHz Rev. 02.2, 2022-1-27