GTRA384802FC-V1-R2 datasheet(1/9 Pages) WOLFSPEED

部件名	GTRA384802FC-V1-R2

功能描述	Thermally-Enhanced High Power RF GaN on SiC HEMT 400 W, 48 V, 3600 – 3800 MHz

PDF	9 Pages

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制造商	WOLFSPEED [WOLFSPEED, INC.]

网页	https://www.wolfspeed.com/

标志

1 / 9 page

Rev. 03.1, 2022-1-27

The information in this document is subject to change without notice.

4600 Silicon Drive | Durham, NC 27703 | Tel: +1.919.313.5300

GTRA384802FC

Package Types: H-37248C-4

PN: GTRA384802FC

Features

• GaN on SiC HEMT technology

• Asymmetric Doherty design

- Main: P

3dB = 200 W typ

- Peak: P

3dB = 280 W typ

• Typical pulsed CW performance, 3800 MHz, 48 V,

combined outputs, Doherty @ P

3dB, 10 µs, 10%

duty cycle

- Output power = 400 W

- Drain efficiency = 62%

- Gain = 12 dB

• Capable of handling 10:1 VSWR at 48 V, 63 W

(WCDMA)output power

• Human Body Model Class 1B (per ANSI/ESDA/

JEDEC JS-001)

• Pb-free and RoHS compliant

Thermally-Enhanced High Power RF GaN on SiC HEMT

400 W, 48 V, 3600 – 3800 MHz

Description

The GTRA384802FC is a 400-watt (P

3dB) GaN on SiC high

electron mobility transistor (HEMT) for use in multi-standard

cellular power amplifier applications. It features input and

output matching, high efficiency, and a thermally-enhanced

package with earless flange.

RF Characteristics

Single-carrier WCDMA Specifications (tested in Wolfspeed Doherty test fixture)

V

DD = 48 V, IDQ = 250 mA, POUT = 63 W avg, VGS(PEAK) = –6 V, ƒ = 3800 MHz, channel bandwidth = 3.84 MHz, peak/average = 10 dB @ 0.01% CCDF

Characteristic

Symbol

Min.

Typ.

Max.

Unit

Gain

G

ps

12

13

—

dB

Drain Efficiency

h

D

38.5

42

—

%

Adjacent Channel Power Ratio

ACPR

—

–33

–29

dBc

Output PAR @ 0.01% CCDF

OPAR

7.3

7.8

—

dB

Note:

All published data at T

CASE = 25°C unless otherwise indicated

ESD: Electrostatic discharge sensitive device—observe handling precautions!

-60

-40

-20

0

20

40

60

0

4

8

12

16

20

24

27

32

37

42

47

52

Average Output Power (dBm)

Single-carrier WCDMA Drive-up

VDD = 48 V, IDQ(MAIN) = 250 mA,

VGS(PEAK) = –6.0 V, ƒ = 3800 MHz

3GPP WCDMA signal, 10 dB PAR,

3.84 MHz bandwidth

Efficiency

PAR @ 0.01% CCDF

Gain

g384802fc-gr1c

类似零件编号 - GTRA384802FC-V1-R2

制造商	部件名	数据表	功能描述
Cree, Inc	GTRA384802FC-V1-R2	1Mb / 5P	Thermally-Enhanced High Power RF GaN on SiC HEMT 400 W, 48 V, 3600 ??3800 MHz

More results

类似说明 - GTRA384802FC-V1-R2

制造商	部件名	数据表	功能描述
Cree, Inc	GTRA362002FC	233Kb / 5P	Thermally-Enhanced High Power RF GaN on SiC HEMT 200 W, 48 V, 3400 ??3600 MHz
	GTRA362802FC	282Kb / 5P	Thermally-Enhanced High Power RF GaN on SiC HEMT 280 W, 48 V, 3400 ??3600 MHz
	GTRA364002FC	279Kb / 5P	Thermally-Enhanced High Power RF GaN on SiC HEMT 400 W, 48 V, 3400 ??3600 MHz
	GTRA374902FC	2Mb / 8P	Thermally-Enhanced High Power RF GaN on SiC HEMT 450 W, 48 V, 3600 ??3700 MHz
	GTRA384802FC	1Mb / 5P	Thermally-Enhanced High Power RF GaN on SiC HEMT 400 W, 48 V, 3600 ??3800 MHz
WOLFSPEED, INC.	GTRA360502M-V1	844Kb / 9P	Thermally-Enhanced High Power RF GaN on SiC HEMT 50 W, 48 V, 3400 – 3800 MHz Rev. 04, 2023-06-27
	GTRA362002FC-V1	435Kb / 8P	Thermally-Enhanced High Power RF GaN on SiC HEMT 200 W, 48 V, 3400 – 3600 MHz Rev. 06, 2023-06-23
	GTRA362802FC-V1	553Kb / 8P	Thermally-Enhanced High Power RF GaN on SiC HEMT 280 W, 48 V, 3400 – 3600 MHz Rev. 04.3, 2022-1-27
	GTRA364002FC	511Kb / 8P	Thermally-Enhanced High Power RF GaN on SiC HEMT 400 W, 48 V, 3400 – 3600 MHz Rev. 04.3, 2022-1-27
	GTRA374902FC	459Kb / 8P	Thermally-Enhanced High Power RF GaN on SiC HEMT 450 W, 48 V, 3600 – 3700 MHz Rev. 02.2, 2022-1-27