GTRA263902FC-V2-R2 datasheet(1/8 Pages) WOLFSPEED

部件名	GTRA263902FC-V2-R2

功能描述	Thermally-Enhanced High Power RF GaN on SiC HEMT 370 W, 48 V, 2495 – 2690 MHz

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制造商	WOLFSPEED [WOLFSPEED, INC.]

网页	https://www.wolfspeed.com/

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1 / 8 page

Rev. 04.1, 2022-1-27

The information in this document is subject to change without notice.

4600 Silicon Drive | Durham, NC 27703 | Tel: +1.919.313.5300

GTRA263902FC

Package Types: H-37248C-4

PN: GTRA263902FC

Features

• GaN on SiC HEMT technology

• Input matched

• Typical Pulsed CW performance, 2690 MHz, 48 V,

combined outputs

- Output power at P

3dB = 370 W

- Efficiency = 70%

- Gain = 15 dB

• Capable of handling 10:1 VSWR @48 V, 56 W (CW)

output power

• Human Body Model class 1A (per ANSI/ESDA/

JEDEC JS-001)

• Low thermal resistance

• Pb-free and RoHS compliant

Thermally-Enhanced High Power RF GaN on SiC HEMT

370 W, 48 V, 2495 – 2690 MHz

Description

The GTRA263902FC is a 370-watt (P

3dB) GaN on SiC high

electron mobility transistor (HEMT) for use in multi-

standard cellular power amplifier applications. It features

input matching, high efficiency, and a thermally-enhanced

package with earless flange.

RF Characteristics

Single-carrier WCDMA Specifications (tested in Wolfspeed Doherty production test fixture)

V

DD = 48 V, IDQ = 200 mA, VGS(PEAK) = VGS @ IDQ = 280 mA –3.0 V, POUT = 56.2 W avg, ƒ = 2690 MHz, 3GPP signal,

channel bandwidth = 3.84 MHz, peak/average = 10 dB @ 0.01% CCDF

Characteristic

Symbol

Min.

Typ.

Max.

Unit

Linear Gain

G

ps

12.5

13.8

—

dB

Drain Efficiency

h

D

50

54

—

%

Adjacent Channel Power Ratio

ACPR

—

-27

-23

dBc

Output PAR @ 0.01% CCDF

OPAR

5

6.7

—

dB

Note:

All published data at T

CASE = 25°C unless otherwise indicated

ESD: Electrostatic discharge sensitive device—observe handling precautions!

-80

-60

-40

-20

0

20

40

60

80

0

4

8

12

16

20

24

28

32

25

30

35

40

45

50

55

Average Output Power (dBm)

Single-carrier WCDMA Drive-up

VDD = 48 V, IDQ(MAIN) = 200 mA,

VGS(PEAK) = -6.0 V, ƒ = 2690 MHz,

3GPP WCDMA signal, PAR = 10 dB,

3.84 MHz BW

Gain

Efficiency

PAR @ 0.01% CCDF

gtra263902fc_g1

类似零件编号 - GTRA263902FC-V2-R2

制造商	部件名	数据表	功能描述
Cree, Inc	GTRA263902FC	486Kb / 8P	Thermally-Enhanced High Power RF GaN on SiC HEMT 370 W, 48 V, 2495 ??2690 MHz

More results

类似说明 - GTRA263902FC-V2-R2

制造商	部件名	数据表	功能描述
Cree, Inc	GTVA263202FC	458Kb / 8P	Thermally-Enhanced High Power RF GaN on SiC HEMT 340 W, 48 V, 2620 ??2690 MHz
	GTRA263902FC	486Kb / 8P	Thermally-Enhanced High Power RF GaN on SiC HEMT 370 W, 48 V, 2495 ??2690 MHz
	GTVA261802FC	495Kb / 8P	Thermally-Enhanced High Power RF GaN on SiC HEMT 170 W, 48 V, 2620 ??2690 MHz
	GTVA262701FA	489Kb / 8P	Thermally-Enhanced High Power RF GaN on SiC HEMT 270 W, 48 V, 2620 ??2690 MHz
	GTVA262711FA	464Kb / 9P	Thermally-Enhanced High Power RF GaN on SiC HEMT 300 W, 48 V, 2620 ??2690 MHz
WOLFSPEED, INC.	GTVA262701FA_V2	506Kb / 8P	Thermally-Enhanced High Power RF GaN on SiC HEMT 270 W, 48 V, 2620 – 2690 MHz Rev. 04.3, 2022-1-27
	GTRA262802FC	515Kb / 9P	Thermally-Enhanced High Power RF GaN on SiC HEMT 250 W, 48 V, 2490 – 2690 MHz Rev. 03.3, 2022-1-27
	GTVA261802FC	536Kb / 8P	Thermally-Enhanced High Power RF GaN on SiC HEMT 170 W, 48 V, 2620 – 2690 MHz Rev. 02.1, 2022-1-27
	GTVA262701FA	506Kb / 8P	Thermally-Enhanced High Power RF GaN on SiC HEMT 270 W, 48 V, 2620 – 2690 MHz Rev. 04.3, 2022-1-27
	GTVA263202FC	632Kb / 8P	Thermally-Enhanced High Power RF GaN on SiC HEMT 340 W, 48 V, 2620 – 2690 MHz Rev. 04.1, 2022-1-27