GTRA364002FC-V1-R2 datasheet(1/8 Pages) WOLFSPEED

部件名	GTRA364002FC-V1-R2

功能描述	Thermally-Enhanced High Power RF GaN on SiC HEMT 400 W, 48 V, 3400 – 3600 MHz

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制造商	WOLFSPEED [WOLFSPEED, INC.]

网页	https://www.wolfspeed.com/

标志

1 / 8 page

Rev. 04.3, 2022-1-27

The information in this document is subject to change without notice.

4600 Silicon Drive | Durham, NC 27703 | Tel: +1.919.313.5300

GTRA364002FC

Package Types: H-37248C-4

Features

• GaN on SiC HEMT technology

• Input matched

• Asymmetrical Doherty design

- Main: P

3dB = 170 W Typ

- Peak: P

3dB = 230 W Typ

• Typical Pulsed CW performance, 3400 to 3600 MHz,

48 V, combined outputs, Doherty @ P

3dB, 10 µs,

10% duty cycle

- Output power = 400 W

- Efficiency = 60 %

- Gain = 14 dB

• Capable of handling 10:1 VSWR @ 48 V, 50 W

(WCDMA) output power

• Human Body Model Class 1A, (per ANSI/ESDA/

JEDEC JS-001)

• Low thermal resistance

• Pb-free and RoHS compliant

Thermally-Enhanced High Power RF GaN on SiC HEMT

400 W, 48 V, 3400 – 3600 MHz

Description

The GTRA364002FC is a 400-watt (P

3dB) GaN on SiC high electron

mobility transistor (HEMT) designed for use in multi-standard cellular

power amplifier applications. It features input matching, high efficency,

and a thermally-enhanced package with earless flange.

RF Characteristics

Single-carrier WCDMA Specifications (tested in Wolfspeed Doherty production test fixture)

V

DD = 48 V, IDQ = 220 mA, POUT = 50 W avg, VGS(PEAK) = VGS @ IDQ = 200 mA – 2.7 V, ƒ = 3600 MHz, 3GPP signal,

channel bandwidth = 3.84 MHz, peak/average = 10 dB @ 0.01% CCDF

Characteristic

Symbol

Min.

Typ.

Max.

Unit

Gain

G

ps

12

13

—

dB

Drain Efficiency

h

D

36

40

—

%

Adjacent Channel Power Ratio

ACPR

—

–30

–27

dBc

Output PAR @ 0.01% CCDF

OPAR

6.4

7.7

—

dB

Note:

All published data at T

CASE = 25°C unless otherwise indicated

ESD: Electrostatic discharge sensitive device—observe handling precautions!

-60

-40

-20

0

20

40

60

0

4

8

12

16

20

24

25

30

35

40

45

50

55

Average Output Power (dBm)

Single-carrier WCDMA Drive-up

VDD = 48 V, IDQ(MAIN) = 220 mA, VGS(PEAK) = -5.8 V,

ƒ = 3600 MHz, 3GPP WCDMA signal,

PAR = 10 dB, 3.84 MHz BW

Gain

Efficiency

PAR @ 0.01% CCDF

gtra364002fc_g1

类似零件编号 - GTRA364002FC-V1-R2

制造商	部件名	数据表	功能描述
Cree, Inc	GTRA364002FC	279Kb / 5P	Thermally-Enhanced High Power RF GaN on SiC HEMT 400 W, 48 V, 3400 ??3600 MHz

More results

类似说明 - GTRA364002FC-V1-R2

制造商	部件名	数据表	功能描述
Cree, Inc	GTRA362002FC	233Kb / 5P	Thermally-Enhanced High Power RF GaN on SiC HEMT 200 W, 48 V, 3400 ??3600 MHz
	GTRA362802FC	282Kb / 5P	Thermally-Enhanced High Power RF GaN on SiC HEMT 280 W, 48 V, 3400 ??3600 MHz
	GTRA364002FC	279Kb / 5P	Thermally-Enhanced High Power RF GaN on SiC HEMT 400 W, 48 V, 3400 ??3600 MHz
	GTRA374902FC	2Mb / 8P	Thermally-Enhanced High Power RF GaN on SiC HEMT 450 W, 48 V, 3600 ??3700 MHz
	GTRA384802FC	1Mb / 5P	Thermally-Enhanced High Power RF GaN on SiC HEMT 400 W, 48 V, 3600 ??3800 MHz
WOLFSPEED, INC.	GTRA360502M-V1	844Kb / 9P	Thermally-Enhanced High Power RF GaN on SiC HEMT 50 W, 48 V, 3400 – 3800 MHz Rev. 04, 2023-06-27
	GTRA362002FC-V1	435Kb / 8P	Thermally-Enhanced High Power RF GaN on SiC HEMT 200 W, 48 V, 3400 – 3600 MHz Rev. 06, 2023-06-23
	GTRA362802FC-V1	553Kb / 8P	Thermally-Enhanced High Power RF GaN on SiC HEMT 280 W, 48 V, 3400 – 3600 MHz Rev. 04.3, 2022-1-27
	GTRA384802FC-V1	585Kb / 9P	Thermally-Enhanced High Power RF GaN on SiC HEMT 400 W, 48 V, 3600 – 3800 MHz Rev. 03.1, 2022-1-27
	GTRA374902FC	459Kb / 8P	Thermally-Enhanced High Power RF GaN on SiC HEMT 450 W, 48 V, 3600 – 3700 MHz Rev. 02.2, 2022-1-27