Rev. 03.5, 2022-1-27

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The information in this document is subject to change without notice.

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PTNC210604MD

Package Types: PG-HB1DSO-14-4

Features

• On-chip matching for broadband operation

• Typical CW performance, 2200 MHz, 28 V,

combined outputs

- Output power at P

3dB = 63 W

- Linear Gain = 28 dB

- Efficiency = 50.5%

• Capable of handling 10:1 VSWR @28 V, 10 W mod

avg output power

• Integrated ESD protection

• Human Body Model Class 1A (per ANSI/ESDA/

JEDEC JS-001)

• Integrated temperature compensation

• Pb-free and RoHS compliant

Wideband LDMOS Two-stage Integrated Power Amplifier

20 W + 40 W, 28 V, 1805 – 2200 MHz

Description

The PTNC210604MD is a wideband, two-stage, LDMOS integrated

power amplifier. It incorporates internal matching for operation

from 1805 MHz to 2200 MHz, and dual independent outputs with 20

W and 40 W of output power each. It is available in a 14-lead plastic

overmold package with gull wing leads.

RF Characteristics

Single-carrier WCDMA Specifications (tested in Wolfspeed Doherty test fixture)

V

DD = 28 V, IDQ1M = 63 mA, IDQ2M = 150 mA, IDQ1P = 40 mA, VGS2P = 2.6 V, POUT = 10 W avg, ƒ = 2200 MHz, 3GPP WCDMA signal,

channel bandwidth = 3.84 MHz, peak/average = 10 dB @ 0.01% CCDF

Characteristic

Symbol

Min.

Typ.

Max.

Unit

Gain

G

ps

26

27

—

dB

Drain Efficiency

h

D

34.5

37

—

%

Adjacent Channel Power Ratio

ACPR

—

–33

–28

dBc

Output PAR @ 0.01% probability on CCDF

OPAR

7.5

8.1

—

dB

Note:

All published data at T

CASE = 25°C unless otherwise indicated

ESD: Electrostatic discharge sensitive device—observe handling precautions!

0

15

30

45

60

0

10

20

30

40

30 32 34 36 38 40 42 44 46 48

Average Output Power (dBm)

Single-carrier WCDMA Drive-up

VDD = 28 V, IDQ1M = 63 mA, IDQ2M = 150 mA,

IDQ1P = 40 mA, VGS2P= 2.6 V, ƒ = 2200 MHz,

3GPP WCDMA signal, PAR = 10 dB,

3.84 MHz BW

PAR @ 0.01% CCDF

Gain

Efficiency

ptnc210604md_g1