PTVA082407NF-V2-R5 datasheet(1/9 Pages) WOLFSPEED

部件名	PTVA082407NF-V2-R5

功能描述	Thermally-Enhanced High Power RF LDMOS FET 240 W, 48 V, 746 – 821 MHz

PDF	9 Pages

Scroll/Zoom	100%

制造商	WOLFSPEED [WOLFSPEED, INC.]

网页	https://www.wolfspeed.com/

标志

1 / 9 page

Rev. 04.1, 2022-02-13

The information in this document is subject to change without notice.

4600 Silicon Drive | Durham, NC 27703 | Tel: +1.919.313.5300

PTVA082407NF

Package Types: PG-HBSOF-4-2

Features

• Broadband internal input matching

• Typical CW performance, 755 MHz, 48 V

- Output power at P

1dB = 225 W

- Output power at P

3dB = 250 W

- Gain = 20.5 dB

- Efficiency = 43%

• Capable of handling 10:1 VSWR @ 48 V, 80 W CW

output power

• Integrated ESD protection

• Human Body Model class 2 (per ANSI/ESDA/

JEDEC JS-001)

• Low thermal resistance

• Pb-free and RoHS compliant

Thermally-Enhanced High Power RF LDMOS FET

240 W, 48 V, 746 – 821 MHz

Description

The PTVA082407NF is a 240-watt LDMOS FET manufactured with Wolfspeed’s 48-V

LDMOS process. It is designed for use in multi-standard cellular power amplifier

applications. It features a single ended design and input matching that allow for

use from 746 MHz to 821 MHz. Manufactured with Wolfspeed’s advanced LDMOS

process, this device provides excellent thermal performance and superior reliability.

RF Characteristics

Single-carrier WCDMA Specifications (tested in Wolfspeed production test fixture)

V

DD = 48 V, IDQ = 900 mA, POUT = 80 W avg, ƒ = 755 MHz, 3GPP signal, channel bandwidth = 3.84 MHz,

peak/average = 10 dB @ 0.01% CCDF

Characteristic

Symbol

Min.

Typ.

Max.

Unit

Linear Gain

G

ps

21

22.5

—

dB

Drain Efficiency

h

D

33

35.5

—

%

Adjacent Channel Power Ratio

ACPR

—

–31.5

–29.5

dBc

Note:

All published data at T

CASE = 25°C unless otherwise indicated

ESD: Electrostatic discharge sensitive device—observe handling precautions!

-60

-40

-20

0

20

40

60

0

4

8

12

16

20

24

25

30

35

40

45

50

55

Average Output Power (dBm)

Single-carrier WCDMA Drive-up

VDD = 48 V, IDQ = 900 mA, ƒ = 755 MHz,

3GPP WCDMA signal, PAR = 10 dB,

3.84 MHz BW

Gain

Efficiency

PAR @ 0.01% CCDF

ptva082407nf_g1

类似零件编号 - PTVA082407NF-V2-R5

制造商	部件名	数据表	功能描述
Infineon Technologies A...	PTVA082407NF	453Kb / 9P	Thermally-Enhanced High Power RF LDMOS FET 240 W, 48 V, 746 ??821 MHz Rev. 02.5, 2017-07-18
Cree, Inc	PTVA082407NF	639Kb / 9P	Thermally-Enhanced High Power RF LDMOS FET 240 W, 48 V, 746 ??821 MHz

More results

类似说明 - PTVA082407NF-V2-R5

制造商	部件名	数据表	功能描述
Infineon Technologies A...	PTFB082817FH	667Kb / 13P	Thermally-Enhanced High Power RF LDMOS FET 280 W, 30 V, 791-821 MHz Rev. 02, 2010-12-13
	PTRA094252FC	400Kb / 9P	Thermally-Enhanced High Power RF LDMOS FET 208 W, 48 V, 746 ??960 MHz Rev. 04.2, 2017-12-08
	PTVA082407NF	453Kb / 9P	Thermally-Enhanced High Power RF LDMOS FET 240 W, 48 V, 746 ??821 MHz Rev. 02.5, 2017-07-18
	PTVA092407NF	434Kb / 9P	Thermally-Enhanced High Power RF LDMOS FET 240 W, 48 V, 869 ??960 MHz Rev. 02.4, 2017-02-07
Cree, Inc	PTRA094252FC	497Kb / 9P	Thermally-Enhanced High Power RF LDMOS FET 208 W, 48 V, 746 ??960 MHz
	PTVA082407NF	639Kb / 9P	Thermally-Enhanced High Power RF LDMOS FET 240 W, 48 V, 746 ??821 MHz
	PTRA084808NF	649Kb / 12P	Thermally-Enhanced High Power RF LDMOS FET 550 W, 48 V, 734 ??821 MHz
	PTVA092407NF	595Kb / 9P	Thermally-Enhanced High Power RF LDMOS FET 240 W, 48 V, 869 ??960 MHz
WOLFSPEED, INC.	PTRA084808NF	881Kb / 12P	Thermally-Enhanced High Power RF LDMOS FET 550 W, 48 V, 734 – 821 MHz Rev. 03.4, 2022-1-27
WOLFSPEED, INC.	PTVA092407NF	708Kb / 9P	Thermally-Enhanced High Power RF LDMOS FET 240 W, 48 V, 869 – 960 MHz Rev. 03.2, 2022-02-13