PTVA092407NF-V2-R5 datasheet(1/9 Pages) WOLFSPEED

部件名	PTVA092407NF-V2-R5

功能描述	Thermally-Enhanced High Power RF LDMOS FET 240 W, 48 V, 869 – 960 MHz

PDF	9 Pages

Scroll/Zoom	100%

制造商	WOLFSPEED [WOLFSPEED, INC.]

网页	https://www.wolfspeed.com/

标志

1 / 9 page

Rev. 03.2, 2022-02-13

The information in this document is subject to change without notice.

4600 Silicon Drive | Durham, NC 27703 | Tel: +1.919.313.5300

PTVA092407NF

Package Types: PG-HBSOF-4-2

Features

• Broadband internal input and output matching

• Typical CW performance, 960 MHz, 48 V, 10 µs pulse

width, 10% duty cycle, single side

- Output power at P

1dB = 240 W

- Output power at P

3dB = 287 W

- Gain = 20 dB

- Efficiency = 62%

• Capable of handling 10:1 VSWR @ 48 V, 80 W CW

output power

• Integrated ESD protection

• Human Body Model class 2 (per ANSI/ESDA/

JEDEC JS-001)

• Low thermal resistance

• Pb-free and RoHS compliant

Thermally-Enhanced High Power RF LDMOS FET

240 W, 48 V, 869 – 960 MHz

Description

The PTVA092407NF is a 240-watt LDMOS FET manufactured with Wolfspeed’s 48-V

LDMOS process. It is designed for use in multi-standard cellular power amplifier

applications. It features a single ended design and input and output matching that allow

for use from 869 MHz to 960 MHz. Manufactured with Wolfspeed’s advanced LDMOS

process, this device provides excellent thermal performance and superior reliability.

RF Characteristics

Single-carrier WCDMA Specifications (tested in Wolfspeed production test fixture)

V

DD = 48 V, IDQ = 900 mA, POUT = 80 W avg, ƒ = 960 MHz, 3GPP signal, channel bandwidth = 3.84 MHz,

peak/average = 10 dB @ 0.01% CCDF

Characteristic

Symbol

Min.

Typ.

Max.

Unit

Linear Gain

G

ps

21.3

22.5

—

dB

Drain Efficiency

h

D

38

40

—

%

Adjacent Channel Power Ratio

ACPR

—

–30

–28.5

dBc

Output PAR @ 0.01% CCDF

OPAR

5.7

6.2

—

dB

Note:

All published data at T

CASE = 25°C unless otherwise indicated

ESD: Electrostatic discharge sensitive device—observe handling precautions!

-60

-40

-20

0

20

40

60

0

4

8

12

16

20

24

25

30

35

40

45

50

55

Average Output Power (dBm)

Single-carrier WCDMA Drive-up

VDD = 48 V, IDQ(MAIN) = 900 mA,

ƒ = 960 MHz, 3GPP WCDMA signal,

PAR = 10 dB, 3.84 MHz BW

Gain

Efficiency

PAR @ 0.01% CCDF

ptva092407nf_g1

类似零件编号 - PTVA092407NF-V2-R5

制造商	部件名	数据表	功能描述
Infineon Technologies A...	PTVA092407NF	434Kb / 9P	Thermally-Enhanced High Power RF LDMOS FET 240 W, 48 V, 869 ??960 MHz Rev. 02.4, 2017-02-07
Cree, Inc	PTVA092407NF	595Kb / 9P	Thermally-Enhanced High Power RF LDMOS FET 240 W, 48 V, 869 ??960 MHz

More results

类似说明 - PTVA092407NF-V2-R5

制造商	部件名	数据表	功能描述
Infineon Technologies A...	PTF081301E	289Kb / 11P	Thermally-Enhanced High Power RF LDMOS FETs 130 W, 869 - 960 MHz Rev. 03, 2005-05-02
	PTRA093818NF	470Kb / 10P	Thermally-Enhanced High Power RF LDMOS FET 415 W, 48 V, 925 ??960 MHz Rev. 05.1, 2017-08-16
	PTRA094808NF	463Kb / 10P	Thermally-Enhanced High Power RF LDMOS FET 480 W, 48 V, 859 ??960 MHz Rev. 03, 2017-08-21
	PTVA092407NF	434Kb / 9P	Thermally-Enhanced High Power RF LDMOS FET 240 W, 48 V, 869 ??960 MHz Rev. 02.4, 2017-02-07
Cree, Inc	PTRA097008NB	732Kb / 10P	Thermally-Enhanced High Power RF LDMOS FET 630 W, 48 V, 920 ??960 MHz
	PTRA094252FC	497Kb / 9P	Thermally-Enhanced High Power RF LDMOS FET 208 W, 48 V, 746 ??960 MHz
	PTRA093818NF	600Kb / 10P	Thermally-Enhanced High Power RF LDMOS FET 415 W, 48 V, 925 ??960 MHz
	PTVA092407NF	595Kb / 9P	Thermally-Enhanced High Power RF LDMOS FET 240 W, 48 V, 869 ??960 MHz
WOLFSPEED, INC.	PTRA093818NF	685Kb / 10P	Thermally-Enhanced High Power RF LDMOS FET 415 W, 48 V, 925 – 960 MHz Rev. 06.2, 2022-01-04
WOLFSPEED, INC.	PTRA097008NB	556Kb / 10P	Thermally-Enhanced High Power RF LDMOS FET 630 W, 48 V, 920 – 960 MHz Rev. 04, 2023-06-22