PXAD184218FV-V1-R2 datasheet(1/9 Pages) WOLFSPEED

部件名	PXAD184218FV-V1-R2

功能描述	Thermally-Enhanced High Power RF LDMOS FET 420 W, 28 V, 1805 – 1880 MHz

PDF	9 Pages

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制造商	WOLFSPEED [WOLFSPEED, INC.]

网页	https://www.wolfspeed.com/

标志

1 / 9 page

All published data at TCASE = 25°C unless otherwise indicated

ESD: Electrostatic discharge sensitive device—observe handling precautions!

Rev. 04, 2023-06-26

The information in this document is subject to change without notice.

4600 Silicon Drive | Durham, NC 27703 | Tel: +1.919.313.5300

PXAD184218FV

Package H-37275G-6/2

Thermally-Enhanced High Power RF LDMOS FET

420 W, 28 V, 1805 – 1880 MHz

Features

• Broadband internal input and output matching

• Asymmetrical Doherty design

- Main : P1dB = 130 W Typ

- Peak : P1dB = 290 W Typ

• Typical Pulsed CW performance, 1842.5 MHz, 28 V,

Doherty configuration

- Output power at P3dB = 420 W

- Efficiency = 62%

- Gain = 14 dB

• Capable of handling 10:1 VSWR @ 28 V, 110 W (WCDMA)

output power

• Integrated ESD protection

• Human Body Model class 2 (per ANSI/ESDA/

JEDEC JS-001)

• Low thermal resistance

• Pb-free and RoHS compliant

Description

The PXAD184218FV is a 420-watt (P3dB) LDMOS FET with an asymmetrical

designintendedforuseinmulti-standardcellularpoweramplifierapplica-

tions in the 1805 to 1880 MHz frequency band. Features include dual-path

design, input and output matching, high gain and thermally-enhanced

package with earless flanges. Manufactured with Wolfspeed's advanded

LDMOS process, this device provides excellent thermal performance and

superior reliability.

RF Characteristics

Two-carrier WCDMA Specifications (tested in Wolfspeed Doherty production test fixture)

VDD = 28 V, IDQ = 720 mA, VGS(PEAK) = 1.4 V, POUT = 60 W avg, ƒ = 1880 MHz, 3GPP signal, channel bandwidth = 3.84 MHz, peak/average =

10 dB @ 0.01% CCDF

Characteristic

Symbol

Min

Typ

Max

Unit

Linear Gain

Gps

15

16

—

dB

Drain Efficiency

hD

49

51.5

—

%

Adjacent Channel Power Ratio

ACPR

—

–28

–25.0

dBc

Output PAR@0.01% CCDF

OPAR

6.8

7.7

—

dBc

-60

-40

-20

0

20

40

60

0

4

8

12

16

20

24

25

30

35

40

45

50

55

Average Output Power (dBm)

Single-carrier WCDMA Drive-up

VDD = 28 V, IDQ(MAIN) = 720 mA,

VGS(PEAK) = 1.4 V, ƒ = 1880 MHz,

3GPP WCDMA signal, PAR = 10 dB,

3.84 MHz BW

Gain

Efficiency

PAR @ 0.01% CCDF

pxad184218fv_g1

类似零件编号 - PXAD184218FV-V1-R2

制造商	部件名	数据表	功能描述
Infineon Technologies A...	PXAD184218FV	339Kb / 9P	Thermally-Enhanced High Power RF LDMOS FET 420 W, 28 V, 1805 ??1880 MHz Rev. 02.1, 2016-12-07
Cree, Inc	PXAD184218FV	465Kb / 9P	Thermally-Enhanced High Power RF LDMOS FET 420 W, 28 V, 1805 ??1880 MHz

More results

类似说明 - PXAD184218FV-V1-R2

制造商	部件名	数据表	功能描述
Infineon Technologies A...	PXFC193808SV	196Kb / 10P	Thermally-Enhanced High Power RF LDMOS FET 380 W, 28 V, 1805 ??1880 MHz Rev. 02.1, 2015-01-13
	PXAC182002FC	1Mb / 8P	Thermally-Enhanced High Power RF LDMOS FET 180 W, 28 V, 1805 ??1880 MHz Rev. 02.3, 2016-06-17
	PXAD184218FV	339Kb / 9P	Thermally-Enhanced High Power RF LDMOS FET 420 W, 28 V, 1805 ??1880 MHz Rev. 02.1, 2016-12-07
Cree, Inc	PXAE183708NB	486Kb / 6P	Thermally-Enhanced High Power RF LDMOS FET 430 W, 28 V, 1805 ??1880 MHz
	PXAE184408NB	1Mb / 6P	Thermally-Enhanced High Power RF LDMOS FET 450 W, 28 V, 1805 ??1880 MHz
	PXAC182002FC	495Kb / 8P	Thermally-Enhanced High Power RF LDMOS FET 180 W, 28 V, 1805 ??1880 MHz
	PXAD184218FV	465Kb / 9P	Thermally-Enhanced High Power RF LDMOS FET 420 W, 28 V, 1805 ??1880 MHz
	PTFB181702FC	554Kb / 8P	Thermally-Enhanced High Power RF LDMOS FET 170 W, 28 V, 1805 ??1880 MHz
	PXFE181507FC	550Kb / 8P	Thermally-Enhanced High Power RF LDMOS FET 175 W, 28 V, 1805 ??1880 MHz
WOLFSPEED, INC.	PXFE181507FC	695Kb / 8P	Thermally-Enhanced High Power RF LDMOS FET 175 W, 28 V, 1805 – 1880 MHz Rev. 04, 2023-06-28