PXAD214218FV-V1-R0 datasheet(1/9 Pages) WOLFSPEED

部件名	PXAD214218FV-V1-R0

功能描述	Thermally-Enhanced High Power RF LDMOS FET 430 W, 28 V, 2110 – 2170 MHz

PDF	9 Pages

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制造商	WOLFSPEED [WOLFSPEED, INC.]

网页	https://www.wolfspeed.com/

标志

1 / 9 page

All published data at TCASE = 25°C unless otherwise indicated

ESD: Electrostatic discharge sensitive device—observe handling precautions!

Rev. 04, 2023-06-23

The information in this document is subject to change without notice.

4600 Silicon Drive | Durham, NC 27703 | Tel: +1.919.313.5300

PXAD214218FV

Package H-37275G-6/2

Thermally-Enhanced High Power RF LDMOS FET

430 W, 28 V, 2110 – 2170 MHz

Features

• Broadband internal input and output matching

• Asymmetrical Doherty design

- Main : P1dB = 130 W Typ

- Peak : P1dB = 290 W Typ

• Typical Pulsed CW performance, 2140 MHz, 28 V,

Doherty configuration

- Output power at P3dB = 436 W

- Efficiency = 55%

- Gain = 13.5 dB

• Capable of handling 10:1 VSWR @28 V, 110 W (WCDMA)

output power

• Integrated ESD protection

• Human Body Model class 2 (per ANSI/ESDA/

JEDEC JS-001)

• Low thermal resistance

• Pb-free and RoHS compliant

Description

The PXAD214218FV is a 430-watt (P3dB) LDMOS FET with an asymmetrical

design intended for use in multi-standard cellular power amplifier

applications in the 2110 to 2170 MHz frequency band. Features

include dual-path design, input and output matching, high gain and

thermally-enhanced package with earless flanges. Manufactured

with Wolfspeed's advanced LDMOS process, this device provides

excellent thermal performance and superior reliability.

RF Characteristics

Two-carrier WCDMA Specifications (tested in Wolfspeed Doherty production test fixture)

VDD = 28 V, IDQ = 720 mA, VGS(PEAK) = 1.5 V, POUT = 56 W avg, ƒ = 2170 MHz, 3GPP signal, channel bandwidth = 3.84 MHz, peak/average =

10 dB @ 0.01% CCDF

Characteristic

Symbol

Min

Typ

Max

Unit

Linear Gain

Gps

15

16

—

dB

Drain Efficiency

hD

45

48.7

—

%

Adjacent Channel Power Ratio

ACPR

—

–24.5

–22

dBc

Output PAR@0.01% CCDF

OPAR

6.1

7.4

—

dBc

-60

-40

-20

0

20

40

60

0

4

8

12

16

20

24

25

30

35

40

45

50

55

Average Output Power (dBm)

Single-carrier WCDMA Drive-up

VDD = 28 V, IDQ(MAIN) = 720 mA,

VGS(PEAK) = 1.4 V, ƒ = 2170 MHz,

3GPP WCDMA signal, PAR = 10 dB,

3.84 MHz BW

Gain

Efficiency

PAR @ 0.01% CCDF

pxad214218fv_g1

PXAD214218FV

类似零件编号 - PXAD214218FV-V1-R0

制造商	部件名	数据表	功能描述
Infineon Technologies A...	PXAD214218FV	391Kb / 9P	Thermally-Enhanced High Power RF LDMOS FET 430 W, 28 V, 2110 ??2170 MHz Rev. 02.2, 2017-03-30
Cree, Inc	PXAD214218FV	524Kb / 9P	Thermally-Enhanced High Power RF LDMOS FET 430 W, 28 V, 2110 ??2170 MHz

More results

类似说明 - PXAD214218FV-V1-R0

制造商	部件名	数据表	功能描述
Infineon Technologies A...	PXFC211507SC	201Kb / 9P	Thermally-Enhanced High Power RF LDMOS FET 150 W, 28 V, 2110 ??2170 MHz Rev. 02, 2015-03-03
	PTFB213208FV	221Kb / 13P	Thermally-Enhanced High Power RF LDMOS FET 320 W, 28 V, 2110 ??2170 MHz Rev. 02, 2012-07-03
	PTFB212507SH	193Kb / 13P	Thermally-Enhanced High Power RF LDMOS FET 200 W, 28 V, 2110 ??2170 MHz Rev. 03, 2015-10-30
	PTAC210802FC	650Kb / 8P	Thermally-Enhanced High Power RF LDMOS FET 80 W, 28 V, 2110 ??2170 MHz Rev. 05.2, 2016-06-17
	PXAD214218FV	391Kb / 9P	Thermally-Enhanced High Power RF LDMOS FET 430 W, 28 V, 2110 ??2170 MHz Rev. 02.2, 2017-03-30
Cree, Inc	PXAD214218FV	524Kb / 9P	Thermally-Enhanced High Power RF LDMOS FET 430 W, 28 V, 2110 ??2170 MHz
	PTFB210801FA	636Kb / 11P	Thermally-Enhanced High Power RF LDMOS FET 80 W, 28 V, 2110 ??2170 MHz
	PTFB213208FV	659Kb / 13P	Thermally-Enhanced High Power RF LDMOS FET 320 W, 28 V, 2110 - 2170 MHz
	PXFE211507FC	587Kb / 8P	Thermally-Enhanced High Power RF LDMOS FET 170 W, 28 V, 2110 ??2170 MHz
WOLFSPEED, INC.	PXFE211507FC	763Kb / 8P	Thermally-Enhanced High Power RF LDMOS FET 170 W, 28 V, 2110 – 2170 MHz Rev. 04, 2023-06-28